The Engineering of Silicon Wafer Material Properties Through Vacancy Concentration Profile Control and the Achievement of Ideal Oxygen Precipitation Behavior

Falster, R.; Gambaro, D.; Olmo, M.; Cornara, M.; Korb, H. W.

doi:10.1557/proc-510-27

Cited by 49 publications

(31 citation statements)

References 10 publications

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“…No (IR) evidence for the incorporation of hydrogen in STD(X)N centers was obtained by replacing H by D, but ENDOR measurements have revealed its presence [24] in nitridated samples (heated in nitro- Stronger lines in co-nitridated and deuterated samples annealed at 550 C compared to co-nitridated and hydrogenated samples gen gas at 1300 C) and irradiated deuterated samples as well as in samples doped with nitrogen during crystal growth. We suggest that the X-defect could involve vacancies [4] that diffuse into Si from a surface layer of Si 3 N 4 up to a concentration of %10 14 cm ± ±3 during the nitridation treatment [25]. Irradiation damage is an alternative source of vacancies so that a subsequent 550 C anneal could again lead to STD(X)N formation in H-doped Si.…”

Section: Introduction Clustering Of Grown-in Interstitial Oxygen Atomentioning

confidence: 96%

Shallow Thermal Donors in Silicon: The Roles of Al, H, N, and Point Defects

Newman

Ashwin

Pritchard

et al. 1998

phys. stat. sol. (b)

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Three families of shallow thermal donors have been identified in annealed Czochralski silicon from measurements of their infrared electronic transitions using Fourier transform spectroscopy. Donors produced in Al-doped Si incorporate an Al impurity; centers produced in hydrogenated material contain an H (or D) atom; a third set of donors labeled STD(X)N produced in nitridated or irradiated pre-hydrogenated samples may incorporate a lattice vacancy rather than a nitrogen atom. A critical review of the literature is made and some rationalization has been effected. Comments are included about the formation of donor centers following anneals of heavily damaged float-zone Si that also contains hydrogen.Introduction. Clustering of grown-in interstitial oxygen atoms (O i ) in Czochralski (Cz) Si annealed in the range 350 C T 500 C leads to the formation of a family of 16 or more different helium-like double donors (TDDN) that evolves with increasing annealing time (increasing N). TDDN 0 and TDDN + give rise to infrared (IR) electronic absorption lines in the ranges 350 to 533 cm ± ±1 and 580 to 1170 cm ± ±1 , respectively. The ionization energies E i of the individual TDDN 0 members decrease with a ªstaircaseº structure as N increases [1], implying that the structures of alternate members may differ slightly. The TDDN + centers also give rise to the electron paramagnetic resonance (EPR) NL8 spectrum and recent measurements demonstrate that adjacent members of the family have C 2v (orthorhombic) and monoclinic-I symmetries, respectively, as N increases [2,3]. Electron nuclear double resonance (ENDOR) measurements reveal the incorporation of Si atoms ( 29 Si, I =

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Section: Introduction Clustering Of Grown-in Interstitial Oxygen Atomentioning

confidence: 96%

Shallow Thermal Donors in Silicon: The Roles of Al, H, N, and Point Defects

Newman

Ashwin

Pritchard

et al. 1998

phys. stat. sol. (b)

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“…Recently, the formation of IG sites in the bulk gettering zone has been facilitated via engineering the vacancy concentration to enhance the clustering of oxygen, rather than focusing on the oxygen content per se ͑and the associated hi-lo-mod hi IG process͒ by Falster and colleagues. 351 The EG zone, region ͑d͒, is also a critical factor in the gettering process. This zone is generally active at the beginning of the IC fabrication process, whereas the conventionally formed IG zone, as noted above, requires a sequential set of process steps for its development.…”

Section: Wafer Designmentioning

confidence: 99%

An Electronics Division Retrospective (1952-2002) and Future Opportunities in the Twenty-First Century

Huff¹

2002

J. Electrochem. Soc.

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The emergence of crystalline silicon and silicon-based materials such as silicon-germanium as the premier materials and the personnel driving the integrated circuit ͑IC͒ microelectronics revolution will be reviewed. The major threshold events from the 1940s through the mid-1960s, presaging the onset of the large scale integration microelectronics era, will be highlighted. The major silicon material challenges such as dislocation-free single-crystal growth, plastic deformation, the point-defect dilemma, gettering, oxygen in silicon, carrier lifetime, and controlled point-defects in the silicon crystal during the evolution of silicon microelectronics from large scale integration through the very large scale integration era in the 1970s and the 1980s into the ultralarge scale integration era of the 1990s will then be reviewed. Opportunities in epitaxy, wafer cleaning, silicon-on-insulator, silicon-germanium, IC scaling and potential changes in device configuration and IC architecture in the evolution towards the 64 Gbit DRAM and 9 G transistor high-performance MPU logic era in 2016 ͑per the 2001 edition of the International Technology Roadmap for Semiconductors͒ will be discussed in the context of silicon-based microelectronics. The complementary role of compound semiconductors, nanoelectronics and the continuing initiative to obtain an optoelectronic system compatible with silicon will also be discussed. Finally, nonsilicon materials and device configurations will briefly be noted. © 2002 The Electrochemical Society. ͓DOI: 10.1149/1.1471893͔ All rights reserved.Available electronicallyApril 11, 2002. The computer and communications age has catapulted electronics to its current status as the dominant global industry. Indeed, we are in the midst of a revolution brought about by the availability of inexpensive information acquisition, manipulation, and distribution systems. Exploitation of electron and hole conduction in silicon has resulted in electronic memory and logic circuits such as the dynamic random access memory ͑DRAM͒ and microprocessor. Control of the interaction of photons with compound semiconductors has resulted in optical devices such as the laser and optical fiber networks. This revolution has been and will continue to be dependent on our ability to control electronic and photonic material processing techniques for the manufacture of useful devices, circuits and systems. The preparation and detailed processing sequence of a material from crystal growth through device and circuit fabrication determines the microstructure and, therefore, the electronic properties of the material and resulting device and circuit performance, yield, and reliability. Electronic materials include semiconductors, dielectrics, magnetics, piezoelectrics, optoelectronic materials, and optical fibers which may be utilized in crystalline, polycrystalline, or amorphous form. Materials are indeed the sine qua non of electronic and optical devices and circuits.An extensive list of relevant citations through 1997 is noted in Ref. ...

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“…Both the technical trends challenge the achievement of IG structure. Exclusive invention of the 'magic denuded zone (MDZ s )' technique [5], the adoption of intentional impurity-doped Cz-Si materials has also been well emphasized. Today the common element for supporting of IG in Cz-Si wafer is nitrogen, the socalled nitrogen-doped Cz-Si (NCZ-Si), and plenty of literatures upon it has been printed [6][7][8].…”

Section: Introductionmentioning

confidence: 99%