The electrical measurements in poly(2-chloroaniline) based thin film sandwich devices

Influence of illumination intensity and temperature on the electrical characteristics of an Al/p-GaAs/In structure prepared by thermal evaporation

“…10, the exponential growth of the interface state densities from midgap towards the top of the valance band is very apparent. The values of interface state density N ss (% 10 12 eV À1 cm À2 ) are reasonable for metal/GaAs SBDs [40,41]. The values of N ss decrease with increasing illumination intensity between the (E v -0.35) and (E v -0.60) eV.…”

Effect of illumination and frequency on the capacitance spectroscopy and the relaxation process of p-ZnTe/n-CdMnTe/GaAs magnetic diode for photocapacitance applications

“…where A * = 4 q m * k 2 /h 3 is the Richardson constant which equal 8.16 A K −2 cm −2 for n-GaAs [50,51], B is the potential barrier. The values of I s , n and B equal 1.581 × 10 −8 A, 3.3, and 0.803 eV, respectively.…”

Electrical properties and the determination of interface state density from I-V, C-f and G-f measurements in Ir/Ru/n-InGaN Schottky barrier diode

“…Whereas, at higher frequencies the capacitance is not dispersive and thus, the interface state in equilibrium with the n-InGaN do not contribute to the capacitance, because the charges at the interface states cannot follow the alternating current signal. Therefore at lower frequencies, the total capacitance is equal to the sum of the space charge capacitance and excess capacitance, while at higher frequencies the total capacitance is due to almost only from the space charge capacitance [24,25]. It means that at higher frequencies, the interface state capacitance does not make any contribution to the total capacitance.…”