The effects of nitrogen implant into gate electrode on the characteristics of dual-gate MOSFETs with ultra-thin oxide and oxynitrides

Chou, A.; Lin, Chuan; Kumar, K. Sathish; Chowdhury, Prattay; Gardner, Mark; Gilmer, Mark; Fulford, J.; Lee, J.C.

doi:10.1109/relphy.1997.584256

Cited by 8 publications

(11 citation statements)

References 8 publications

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“…For many years, thermally grown silicon dioxide has been the primary gate dielectric and has demonstrated robustness and effectiveness. For ultrathin (Ͻ3.0-nm) gate dielectrics, oxynitrides (N incorporated in SiO 2 ), are used because of their greater immunity to electrical stress and suppression of boron penetration [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Key measurements of ultrathin gate dielectric reliability and in-line monitoring

et al. 1999

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High-performance CMOS products depend upon the reliability of ultrathin gate dielectrics. In this paper a methodology for measuring thin gate dielectric reliability is discussed in which the focus is upon the elements of those test structures used in the evaluation, the design of the reliability stress matrix, and the generation of engineering design models. Experimental results are presented which demonstrate the reliability of ultrathin gate dielectrics measured on a wide variety of test structures with dielectric thicknesses ranging from 7 to 3.5 nm. An overview is provided for thin gate oxide reliability that was measured on integrated functional chips-high-performance microprocessors and static random-access memory (SRAM) chips. The data from these measurements spanned the period from early process and device development to full production. Manufacturing in-line monitoring for thin gate dielectric yield and reliability is also discussed, with several case histories presented which show the effectiveness of monitors in detecting process-induced dielectric failures. Finally, causes of oxide fails are discussed, leading to the process actions necessary for controlling thin gate dielectric defects.

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Section: Introductionmentioning

confidence: 99%

Key measurements of ultrathin gate dielectric reliability and in-line monitoring

et al. 1999

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“…N ITROGEN implantation (N I/I) into the poly-Si gate has been proposed as a means of suppressing boron penetration through the thin gate oxide in surface-channel PMOSFET's [1], [2]. Although the N I/I is effective to suppress boron-penetration and the associated degradation of oxide reliability and hole mobility, and the shifts of threshold voltage, it will enhance the poly-depletion effect and increase gate resistance [2].…”

Section: Introductionmentioning

confidence: 99%

“…Although the N I/I is effective to suppress boron-penetration and the associated degradation of oxide reliability and hole mobility, and the shifts of threshold voltage, it will enhance the poly-depletion effect and increase gate resistance [2]. To reduce the gate resistance of poly-Si lines, the application of silicide on p-type poly-Si gate of sub-0.25-m PMOSFET to improve the conductivity of poly-gate is a necessity.…”

Section: Introductionmentioning

confidence: 99%

Suppression of cobalt silicide agglomeration using nitrogen (N/sub 2//sup +/) implantation

Sun

Liaw

Hsu

1998

IEEE Electron Device Lett.

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In this paper, the effects of nitrogen coimplantation with boron into p + -poly gate in PMOSFET's on the agglomeration effects of CoSi2 are studied. The thermal stability of CoSi2/poly-Si stacked layers can be significantly improved by using nitrogen implantation. Samples with 40-nm Cobalt Silicide (CoSi2) on 210-nm poly-Si implanted by 2 2 10 15 /cm 2 N + 2 are thermally stable above 950 C for 30 s in N2 ambient. If the dose of nitrogen is increased up to 6 2 10 15 /cm 2 , the sheet resistance of CoSi2 film is not increased at all, and TEM photographs show that the agglomeration of CoSi 2 film is completely suppressed.

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“…24,25 So, the direct implantation of nitrogen into the silicon substrates has been proposed as a nitridation technique for ultrathin gate oxides. [26][27][28][29][30] Some studies have also been reported that gate oxides grown on nitrogen implanted silicon substrates exhibit superior electrical properties, effectively prevent boron penetration and improve the hot-carrier resistance. [31][32][33][34][35][36] To achieve a thin nitrided polyoxide film, a simple technique has been described in this study.…”

mentioning

confidence: 99%

Nitrogen Effects on the Integrity of Silicon Dioxide Grown on Polycrystalline Silicon

Lai

Kao

Lee

et al. 2007

J. Electrochem. Soc.

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In this paper, we describe a simple technique to achieve a thin nitrided polyoxide film, only requiring an extra nitrogen implantation to be compatible with the floating gate nonvolatile memory process. The integrity of polyoxides is improved by using the through-silicon-gate nitrogen implantation. Nitridation can be achieved by implanting nitrogen into polysilicon gate followed by a high temperature annealing to drive the nitrogen atoms across the polysilicon, through the polyoxide, and to incorporate nitrogen at the polyoxide/polysilicon interface. The nitrogen-rich layer formed during the driven-in process not only strengthens the polyoxide structure but also improves the polyoxide quality. Improvements of electrical characteristics such as a low leakage current, a low electron trapping, and a high breakdown field for both positive and negative biases have been observed.

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The effects of nitrogen implant into gate electrode on the characteristics of dual-gate MOSFETs with ultra-thin oxide and oxynitrides

Cited by 8 publications

References 8 publications

Key measurements of ultrathin gate dielectric reliability and in-line monitoring

Key measurements of ultrathin gate dielectric reliability and in-line monitoring

Suppression of cobalt silicide agglomeration using nitrogen (N/sub 2//sup +/) implantation

Nitrogen Effects on the Integrity of Silicon Dioxide Grown on Polycrystalline Silicon

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