The effects of growth temperature on the microstructure and electrical barrier height in PtSi/p-Si(100) Schottky barrier detector

Horng, Gwo-Ji; Chang, Chun‐Yen; Ho, Chia; Lee, Ching-Yuan; Huang, Tiao‐Yuan

doi:10.1016/s0040-6090(00)01063-4

Cited by 5 publications

(2 citation statements)

References 5 publications

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“…Schottky contacts themselves have been utilized as a rectifier and a simple photodetector (e.g. in thermal imaging devices) [91][92][93][94][95] while Ohmic contacts are needed for many devices to transmit the electric current through a device p-n junction structure with a minimized resistance [88,89,96,97]. Two parameters should be minimized in high-quality Ohmic contacts: contact resistivity and carrier recombination (or generation).…”

Section: Trade-off Between Ohmic and Recombination Losses At Metal-se...mentioning

confidence: 99%

Bridging the gap between surface physics and photonics

Laukkanen,

Punkkinen,

Kuzmin

et al. 2024

Rep. Prog. Phys.

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Use and performance criteria of photonic devices increase in various application areas such as information and communication, lighting, and photovoltaics. In many current and future photonic devices, surfaces of a semiconductor crystal are a weak part causing significant photo-electric losses and malfunctions in applications. These surface challenges, many of which arise from material defects at semiconductor surfaces, include signal attenuation in waveguides, light absorption in light emitting diodes, non-radiative recombination of carriers in solar cells, leakage (dark) current of photodiodes, and light reflection at solar cell interfaces for instance. To reduce harmful surface effects, the optical and electrical passivation of devices has been developed for several decades, especially with the methods of semiconductor technology. Because atomic scale control and knowledge of surface-related phenomena have become relevant to increase the performance of different devices, it might be useful to enhance the bridging of surface physics to photonics. Toward that target, we review some evolving research subjects with open questions and possible solutions, which hopefully provide example connecting points between photonic device passivation and surface physics. One question is related to the properties of the wet chemically cleaned semiconductor surfaces which are typically utilized in device manufacturing processes, but which appear to be different from crystalline surfaces studied in ultrahigh vacuum by physicists. In devices, a defective semiconductor surface often lies at an embedded interface formed by a thin metal or insulator film grown on the semiconductor crystal, which makes the measurements of its atomic and electronic structures difficult. To understand these interface properties, it is essential to combine quantum mechanical simulation methods. This review also covers metal-semiconductor interfaces which are included in most photonic devices to transmit electric carriers to the semiconductor structure. Low-resistive and passivated contacts with an ultrathin tunnelling barrier are an emergent solution to control electrical losses in photonic devices.

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Section: Trade-off Between Ohmic and Recombination Losses At Metal-se...mentioning

confidence: 99%

Bridging the gap between surface physics and photonics

Laukkanen,

Punkkinen,

Kuzmin

et al. 2024

Rep. Prog. Phys.

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“…Since the concept of silicide Schottky-barrier detector focal plane arrays (FPAs) was proposed by Shepherd and Yang in 1973 [1], the silicide/Si FPA has become one of the most mature technologies for large-area, high-density FPAs for many short-wavelength infrared (SWIR, 1-3 µm) and middlewavelength infrared (MWIR, 3-5 µm) applications. This is due primarily to its process compatibility with silicon very large scale integration (VLSI) [2][3][4]. PtSi/Si FPAs are used for imaging in the MWIR region.…”

Section: Introductionmentioning

confidence: 99%

Reducing the effective barrier height of a PtSi Schottky diode by a p⁺doping spike using pulsed laser doping

Zhao

Chen

2003

J. Phys. D: Appl. Phys.

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The structure of PtSi/p+/p-Si fabricated by chemical vapour doping has been investigated for reduction of the Schottky barrier height. The interface structure and photoelectric properties of PtSi/p+/p-Si thin film structure have been studied. The results from AES profile analysis show that doped boron moves with the PtSi/Si interface during silicide growth. Concomitantly, the boron at the PtSi/Si interface out-diffuses to the Pt–PtSi interface. Finally, the boron piles up at the surface. It has been considered that the redistribution of the dopant boron is due to the solubility of the dopant in the silicide. The Schottky barrier height of PtSi/p+/p-Si is 0.13 eV (for cutoff wavelength 9.5 µm). That is lower than the 0.19 eV value of PtSi/p-Si (for cutoff wavelength 6.5 µm). Since the Schottky barrier height is lowered, the cutoff wavelength can be extended. Due to the Fowler dependence, the detector's quantum efficiency can be improved.

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Interfacial composition and electrical properties of PtSi/Si1−xGex/Si diodes by molecular beam epitaxy (MBE) and pulsed laser deposition (PLD)

Zhao

Chen

2003

Applied Surface Science

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The effects of growth temperature on the microstructure and electrical barrier height in PtSi/p-Si(100) Schottky barrier detector

Cited by 5 publications

References 5 publications

Bridging the gap between surface physics and photonics

Bridging the gap between surface physics and photonics

Reducing the effective barrier height of a PtSi Schottky diode by a p⁺doping spike using pulsed laser doping

Interfacial composition and electrical properties of PtSi/Si1−xGex/Si diodes by molecular beam epitaxy (MBE) and pulsed laser deposition (PLD)

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The effects of growth temperature on the microstructure and electrical barrier height in PtSi/p-Si(100) Schottky barrier detector

Cited by 5 publications

References 5 publications

Bridging the gap between surface physics and photonics

Bridging the gap between surface physics and photonics

Reducing the effective barrier height of a PtSi Schottky diode by a p+doping spike using pulsed laser doping

Interfacial composition and electrical properties of PtSi/Si1−xGex/Si diodes by molecular beam epitaxy (MBE) and pulsed laser deposition (PLD)

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Reducing the effective barrier height of a PtSi Schottky diode by a p⁺doping spike using pulsed laser doping