Reducing the effective barrier height of a PtSi Schottky diode by a p⁺doping spike using pulsed laser doping

Abstract

The structure of PtSi/p+/p-Si fabricated by chemical vapour doping has been investigated for reduction of the Schottky barrier height. The interface structure and photoelectric properties of PtSi/p+/p-Si thin film structure have been studied. The results from AES profile analysis show that doped boron moves with the PtSi/Si interface during silicide growth. Concomitantly, the boron at the PtSi/Si interface out-diffuses to the Pt–PtSi interface. Finally, the boron piles up at the surface. It has been considered that the redistribution of the dopant boron is due to the solubility of the dopant in the silicide. The Schottky barrier height of PtSi/p+/p-Si is 0.13 eV (for cutoff wavelength 9.5 µm). That is lower than the 0.19 eV value of PtSi/p-Si (for cutoff wavelength 6.5 µm). Since the Schottky barrier height is lowered, the cutoff wavelength can be extended. Due to the Fowler dependence, the detector's quantum efficiency can be improved.

Effect of pulsed plasma on the scramjet combustor

“…After the fuel is ejected from the injection hole, it continuously m ixes with the surrounding incom ing flow as it flows downstream , and the size of the jet cross-sectional area can visually reflect the strength of m ixing. The turbulence characteristics of the central region of the jet are also an im portant indicator of the m ixing ability of the fuel and the incom ing flow [19], and the higher the turbulence in the central region of the injected fuel, the easier it is to absorb the surrounding incom ing flow and m ix it better. Therefore, this section analyzes the effect of plasm a on the effect of m ixing from two perspectives: the degree of diffusion in the jet cross-section and the turbulent energy in the central region of the jet.…”