“…Because research the VLS method began as early as in 1964 by Wagner et al [11] for silicon whisker growth, and then this method has being applied for NWs growth on GaAs substrate. In this case, the VLS method strongly depends on many technological factors: the growing temperature, catalyst metal, vapor pressure and gas volume, the bulk and surface diffusion of the catalyst metal [8,10,12]. Secondly, the sizes of catalyst metal particles also strongly effect the seed nuclear formation on the solid surface, the features of the phase diagram of the catalyst metal-material system to NWs growth process [1,2,8,10,13].…”