Ag nanoparticle catalyst based on Ga2O3/GaAs semiconductor nanowire growth by VLS method

Abstract

In this paper, we report the synthesis results of Ga 2 O 3 semiconductor nanowires (NWs) on GaAs (100) semi-insulator substrate by vapor liquid solid (VLS) method. Our study based on Ag nanoparticle (AgNP) catalyst, in which prepared by conventional sol-gel method. As the GaAs wafer, after being deposited an AgNP layer in HF/AgNO 3 aqueous solution, which dried and loaded to vacuum-chamber. GaAs slices heated in vacuum-furnace by VLS method with two temperature modes. The results showed that the Ga 2 O 3 NW morphologies and properties depend strongly on technological conditions, such as AgNP catalyst concentration, growth temperature, and vapor pressure. It is also indicated that the NW random grown over large area with the diameter in the region conform from 18 to 30 nm scale and lengths ranging from several tens of nm to a few hundred micrometers.

Dynamics Contributions to the Growth Mechanism of Ga2O3 Thin Film and NWs Enabled by Ag Catalyst

“…In addition, the presence of Ag affects the uncoated area and enhances nucleation of nanocrystalline thin film of Ga 2 O 3 . Due to the self-diffusion of Ag atoms, more oxygen molecules will enhance the dissolution of gallium suboxide (Ga 2 O) in the liquid Ag and deposit Gallium (III) oxide (Ga 2 O 3 ) through crystal nucleation on the bare quartz by vapor–liquid–solid (VLS) growth mechanism to form a nanocrystalline thin film [9].…”

“…Although Ga 2 O 3 is a desired material in the semiconductor industry, the cost of Ga 2 O 3 wafers is still prohibitively high and methods for the top-down and bottom-up fabrication of Ga 2 O 3 nanostructures are still immature. Hence, a wide variety of methods to grow Ga 2 O 3 thin film and nanowires have been explored, such as thermal oxidation [7,8], vapor–liquid–solid growth [9], pulsed laser deposition [10], sputtering [11], thermal evaporation [12,13,14], molecular beam epitaxy [15], laser ablation [16], arc-discharge [17], carbothermal reduction [18], microwave plasma [19], metalorganic chemical vapor deposition [20], and the hydrothermal method [21,22]. In this work, the thermal oxidation process was performed to explore the effect of silver thin film as a catalyst to enhance the growth of Ga 2 O 3 .…”

“…Silver nanoparticles (Ag NPs) have been explored as a possible catalyst for Ga 2 O 3 nanowire growth [9,24,25]. In addition, silver has been used as a photocatalyst and doping material for different materials such as MoS 2 , SnO 2 nanostructures, and TiO 2 /SnO 2 nanocomposite [26,27,28].…”

Ga2O3 Nanowire Synthesis and Device Applications

“…A wide variety of methods have been used to grow Ga 2 O 3 nanowires. These include thermal oxidation [36], vapor-liquid-solid mechanism [37], pulsed laser deposition [38], sputtering [39], thermal evaporation [40][41][42], molecular beam epitaxy [43], laser ablation [44], arc discharge [45], carbothermal reduction [46], microwave plasma [47], metalorganic chemical vapor deposition [48] and the hydrothermal method [49,50]. Table 3 summarizes the advantages and disadvantages of these methods.…”

“…Commonly used catalysts include Au, Ni, and Fe. These catalysts are commonly deposited on the substrate using the sol-gel method [37]. Nanowire growth occurs at the locations where the catalysts are deposited.…”