The effective density of randomly moving electrons and related characteristics of materials with degenerate electron gas

Palenskis, Vilius

doi:10.1063/1.4871757

Cited by 15 publications

(15 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It illustrates that the effective density of randomly moving electrons eff n equals the total density of free electrons only when the shallow donor density D n is smaller than 18 10 cm −3 . However, a sharp decrease is found at high densities, and the ratio eff n n is well below unity at 21 10 n ≈ cm −3 . The effective density of randomly moving electrons eff n dependence on the total density n of free electrons in nSi at 300 T = K is shown in Figure 5.…”

Section: Applications Of the Basic Relations To Transport Features Ofmentioning

confidence: 92%

“…where both sides mean the conductivity. But as it will be shown later the quantity d d F n E in Equation (2) left side is proportional to the effective density of randomly moving electrons, while the expression enµ contains the total electron density n ; this is wrong for degenerate silicon because the main contribution comes from the randomly moving electrons, located near the Fermi energy, while the contribution due to the electrons located deep below the Fermi level is next to zero because of limitations induced by the Pauli principle [19]- [21]. The randomly moving electrons not only determine the electric conduction and electron diffusion, but also electron heat capacity, electron thermal noise, electron heat conduction and other dissipative phenomena [22].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Transport of Electrons in Donor-Doped Silicon at Any Degree of Degeneracy of Electron Gas

Palenskis¹

2014

WJCMP

View full text Add to dashboard Cite

The general expressions, based on the Fermi distribution of the free electrons, are applied for calculation of the kinetic coefficients in donor-doped silicon at arbitrary degree of the degeneracy of electron gas under equilibrium conditions. The classical statistics lead to large errors in estimation of the transport parameters for the materials where Fermi level is located high above the conduction band edge unless the effective density of randomly moving electrons is introduced. The obtained results for the diffusion coefficient and drift mobility are discussed together with practical approximations applicable for non-degenerate electron gas and materials with arbitrary degree of degeneracy. In particular, the drift mobility of randomly moving electrons is found to depend on the degree of degeneracy and can exceed the Hall mobility considerably. When the effective density is introduced, the traditional Einstein relation between the diffusion coefficient and the drift mobility of randomly moving electrons is conserved at any level of degeneracy. The main conclusions and formulae can be applicable for holes in acceptor-doped silicon as well.

show abstract

Section: Applications Of the Basic Relations To Transport Features Ofmentioning

confidence: 92%

Section: Introductionmentioning

confidence: 99%

Transport of Electrons in Donor-Doped Silicon at Any Degree of Degeneracy of Electron Gas

Palenskis¹

2014

WJCMP

View full text Add to dashboard Cite

show abstract

“…According to Fermi-Dirac statistics and Pauli principle description of the electrical conductivity of the metals including all valence electrons is unacceptable [9,10], because randomly can move only a small part of electrons which energy is close to the Fermi level energy, and that electrons which energy is well below the Fermi level energy cannot change their energy, because all neighbor energy levels are occupied. Concerning that the Sommerfeld's model is based on the spherical Fermi surface, there also are uncertainties in determination of both the density-of-states (DOS) in conduction band and the Fermi energy, because the Fermi surfaces for many of metals are not spherical [11].…”

Section: Introduction mentioning

confidence: 99%

“…Concerning that the Sommerfeld's model is based on the spherical Fermi surface, there also are uncertainties in determination of both the density-of-states (DOS) in conduction band and the Fermi energy, because the Fermi surfaces for many of metals are not spherical [11]. The determination of the effective density neff of the randomly moving (RM) electrons in elemental metals eliminates the mentioned uncertainties [9,10].…”

Section: Introduction mentioning

confidence: 99%

Analysis of Transport Properties of the Randomly Moving Electrons in Metals

Palenskis¹,

Žitkevičius²

2019

View full text Add to dashboard Cite

In this critical analysis on the base of randomly moving (RM) electrons, presented the resistivity dependence on temperature for elemental metals both above and below the Debye’s temperatures. There also are presented the general relationships for estimation of the average diffusion coefficient, the average velocity, mean free path and average relaxation time of RM electrons on the Fermi surface at mentioned temperature range. It is shown that the scattering of RM electrons mainly is due to electronic defects associated with distortion of the periodic potential distribution in the periodic lattice, and accounting the exchange of the thermal energies between phonon and RM electron. The calculation results of resistivity dependence on temperature in the temperature range from 1 K to 900 K are demonstrated for Au and W and compared with the experimental data. There also is presented the simple method for determination of the basic kinetic characteristic dependences on temperature only from the resistivity dependence on temperature. It is at first time determined for Au and W the temperature dependences of the mean free path, average diffusion coefficient, average relaxation time of RM electrons from 1 K to 900 K.

show abstract

“…Obviously, this phenomenon is a typical nonlinear effect.Furthermore, the numerical results of energy gap can be used to calculate the number of superconducting carriers. By taking into account the thermal population of the quasiparticle excitations of the Cooper pairs (Bogoliubov quasiparticles), BCS theory predicts:17,18…”

mentioning

confidence: 99%

Superconducting pair-breaking under intense sub-gap terahertz radiation

Tian

Zuber

Huang

et al. 2019

Applied Physics Letters

View full text Add to dashboard Cite

We study the effect of a strong and low frequency (ω < Δ, the superconducting gap) electrical field on a superconducting state. It is found that the superconducting gap decreases with the field intensity and wavelength. The physical mechanism for this dependence is the multiphoton absorption by a superconducting electron. By constructing the state of a superconducting electron dressed by photons, we determined the dependence of the superconducting gap on E / ω and temperature. We show that the critical temperature is determined by the parameter E / ω which is distinct from that induced by the heating effect. The result is consistent with experimental findings. This result can be applied to study terahertz nonlinear superconducting metamaterials. Abstract:We study the effect of a strong and low frequency (ω < Δ, the superconducting gap) electrical field on a superconducting state. It is found that the superconducting gap decreases with the field intensity and wavelength. The physical mechanism for this dependence is the multi-photon absorption by a superconducting electron. By constructing the state of a superconducting electron dressed by photons, we determined the dependence of the superconducting gap on / and temperature. We show that the critical temperature is determined by the parameter / which is distinct from that induced by the heating effect. The result is consistent with experimental findings.This result can be applied to study the terahertz nonlinear superconducting metamaterials. *czhang@uow.edu.au

show abstract

The effective density of randomly moving electrons and related characteristics of materials with degenerate electron gas

Cited by 15 publications

References 11 publications

Transport of Electrons in Donor-Doped Silicon at Any Degree of Degeneracy of Electron Gas

Transport of Electrons in Donor-Doped Silicon at Any Degree of Degeneracy of Electron Gas

Analysis of Transport Properties of the Randomly Moving Electrons in Metals

Superconducting pair-breaking under intense sub-gap terahertz radiation

Contact Info

Product

Resources

About