This paper gives a summary of a new insight into basic electron transport characteristics in crystalline elemental metals. The general expressions based on the Fermi-Dirac distribution of the effective density of the randomly moving electrons, their diffusion coefficient, drift mobility, and other characteristics, including the Einstein relation between diffusion coefficient and drift mobility, are presented. It is shown that the creation of the randomly moving electrons due to lattice atom vibrations produces the same number of electronic defects, which cause scattering of the randomly moving electrons and related transport characteristics.

In this critical analysis on the base of randomly moving (RM) electrons, presented the resistivity dependence on temperature for elemental metals both above and below the Debye’s temperatures. There also are presented the general relationships for estimation of the average diffusion coefficient, the average velocity, mean free path and average relaxation time of RM electrons on the Fermi surface at mentioned temperature range. It is shown that the scattering of RM electrons mainly is due to electronic defects associated with distortion of the periodic potential distribution in the periodic lattice, and accounting the exchange of the thermal energies between phonon and RM electron. The calculation results of resistivity dependence on temperature in the temperature range from 1 K to 900 K are demonstrated for Au and W and compared with the experimental data. There also is presented the simple method for determination of the basic kinetic characteristic dependences on temperature only from the resistivity dependence on temperature. It is at first time determined for Au and W the temperature dependences of the mean free path, average diffusion coefficient, average relaxation time of RM electrons from 1 K to 900 K.

It is shown that the linear resistivity dependence on temperature for metals above the Debye's temperature mainly is caused by electron-electron scattering of randomly moving electrons. The electron mean free path in metals at this temperature range is in inverse proportion to the effective density of randomly moving electrons, i.e. it is in inverse proportion both to the temperature, and to the density-of-states at the Fermi surface. The general relationships for estimation of the average diffusion coefficient, the average velocity, mean free length and average relaxation time of randomly moving electrons at the Fermi surface at temperatures above the Debye's temperature are presented. The effective electron scattering cross-sections for different metals also are estimated. The calculation results of resistivity dependence on temperature in the range of temperature from 1 K to 900 K for Au, Cu, Mo, and Al also are presented and compared with the experimental data. Additionally in temperature range from 1 K to 900 K for copper, the temperature dependences of the mean free path, average diffusion coefficient, average drift mobility, average Hall mobility, average relaxation time of randomly moving electrons, and their resultant phonon mediated scattering cross-section are presented.

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An integration degree of modern printed circuit boards (PCB) is continually increasing. One of the important stages in the manufacturing of electronic devices is component soldering onto PCB pads. The soldering process is affected by many factors, which may lead to the formation of undesirable soldering defects. Some kinds of defects including bridge defects are detected visually. In the current article the possibility of bridge defect detection in a multi-pin surface mount component PCB images using wavelet transform is analyzed.

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