Transport of Electrons in Donor-Doped Silicon at Any Degree of Degeneracy of Electron Gas

Palenskis, Vilius

doi:10.4236/wjcmp.2014.43017

Cited by 6 publications

(5 citation statements)

References 34 publications

(32 reference statements)

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“…Thus, in writing formulas (13) and (15), it was supposed that the static conductivity of the re-semiconductor with a degenerate electron gas in the c band is equal to the product of the elementary charge, the concentration of all mobile electrons, and the drift mobility of electrons with a total energy in the vicinity of the Fermi level. This is consistent with the conventional theory of semiconductor conductivity [16,22,30,31], but is inconsistent with the concepts developed in [32].…”

Section: R E U Esupporting

confidence: 63%

Quasi-Classical Model of the Static Electrical Conductivity of Heavily Doped Degenerate Semiconductors at Low Temperatures

Poklonski¹,

Вырко²,

Dzeraviaha³

2018

Semiconductors

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Germanium, silicon, gallium arsenide, and indium antimonide n-type crystals on the metal side of the insulator-metal transition (Mott transition) are considered. In the quasi-classical approximation, the static (direct current) electrical conductivity and the drift mobility of electrons of the c band, and electrostatic fluctuations of their potential energy and the mobility edge are calculated. It is considered that a single event of the elastic Coulomb scattering of a mobile electron occurs only in a spherical region of the crystal matrix with an impurity ion at the center. The results of calculations using the proposed formulas without using fitting parameters are numerically consistent with experimental data in a wide range of concentrations of hydrogenlike donors at their weak and moderate compensation by acceptors.

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Section: R E U Esupporting

confidence: 63%

Quasi-Classical Model of the Static Electrical Conductivity of Heavily Doped Degenerate Semiconductors at Low Temperatures

Poklonski¹,

Вырко²,

Dzeraviaha³

2018

Semiconductors

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“…It has been considered that scattering cross-section fluctuates slowly with a 1/ f spectrum, and this idea is live till now26. It is very strange because the scattering processes are very fast, for example, the relaxation times for different scattering mechanisms in silicon are in the range from 10 −14 s to 10 −12 s2728.…”

mentioning

confidence: 99%

Nature of low-frequency noise in homogeneous semiconductors

Palenskis

Maknys

2015

Sci Rep

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This report deals with a 1/f noise in homogeneous classical semiconductor samples on the base of silicon. We perform detail calculations of resistance fluctuations of the silicon sample due to both a) the charge carrier number changes due to their capture–emission processes, and b) due to screening effect of those negative charged centers, and show that proportionality of noise level to square mobility appears as a presentation parameter, but not due to mobility fluctuations. The obtained calculation results explain well the observed experimental results of 1/f noise in Si, Ge, GaAs and exclude the mobility fluctuations as the nature of 1/f noise in these materials and their devices. It is also shown how from the experimental 1/f noise results to find the effective number of defects responsible for this noise in the measured frequency range.

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“…(4) it follows that τ r is always smaller than any relaxation time component due to any scattering process. For example, the relaxation time for silicon does not exceed 2·10 -13 s at room temperature [33,34]. The same can be said about the relaxation time of the scattering cross-section.…”

Section: Analysis Of the Possibility Of Mobility Fluctuations Of Freementioning

confidence: 73%

The charge carrier capture–emission process – the main source of the low-frequency noise in homogeneous semiconductors

Palenskis¹

2017

Lith. J. Phys.

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The possibility of determination of the number of localized capture centers of defects (relaxators) that cause low-frequency noise in a particular frequency range has been investigated. Here it is shown that a minimum number of relaxators is needed to generate 1/f type low-frequency noise only when relaxation times are arbitrarily distributed one-by-one in every two-octave range. The expression for estimation of the low-frequency noise level of the sample under test is presented. The presented expression for 1/f noise explains not only the noise level dependence both on the frequency and number of defects in the sample but also the observed noise intensity dependence on the mobility of free charge carriers. It is shown that the main source that causes low-frequency noise in homogeneous semiconductors is the charge carrier capture-emission process.

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Transport of Electrons in Donor-Doped Silicon at Any Degree of Degeneracy of Electron Gas

Cited by 6 publications

References 34 publications

Quasi-Classical Model of the Static Electrical Conductivity of Heavily Doped Degenerate Semiconductors at Low Temperatures

Quasi-Classical Model of the Static Electrical Conductivity of Heavily Doped Degenerate Semiconductors at Low Temperatures

Nature of low-frequency noise in homogeneous semiconductors

The charge carrier capture–emission process – the main source of the low-frequency noise in homogeneous semiconductors

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