This report deals with a 1/f noise in homogeneous classical semiconductor samples on the base of silicon. We perform detail calculations of resistance fluctuations of the silicon sample due to both a) the charge carrier number changes due to their capture–emission processes, and b) due to screening effect of those negative charged centers, and show that proportionality of noise level to square mobility appears as a presentation parameter, but not due to mobility fluctuations. The obtained calculation results explain well the observed experimental results of 1/f noise in Si, Ge, GaAs and exclude the mobility fluctuations as the nature of 1/f noise in these materials and their devices. It is also shown how from the experimental 1/f noise results to find the effective number of defects responsible for this noise in the measured frequency range.
Bulk ZnO crystals were implanted using 100keV H+ ions with doses 5×1016 and 2×1017cm−2 and subsequently annealed at 200–600°C to study the evolution of the implanted H by employing secondary ion mass spectrometry and scanning spreading resistance microscopy. It is shown that the heat treatment results in a decrease of H concentration in the implanted region, while no significant broadening of the H profiles is observed. This suggests that the implanted H is trapped in immobile complexes which dissociate during annealing with subsequent outdiffusion of H from the implanted region. The formation of a highly conductive n+-layer is observed in the implanted region, and the n+-layer is found to be stable up to 600°C. A correlation between electrical activity of H and presence of radiation damage is discussed.
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