The Effect of Surface Cleaning on Current Collapse in AlGaN∕GaN HEMTs

Oxide-Based Electric-Double-Layer Thin-Film Transistors on a Flexible Substrate

“…The estimated contact resistance of the device is less than 10% of the total channel resistance, even at V G = 1 V. It is also found that I D exhibits a clear pinch off and saturates at higher V D . A slight decrease of I D is observed in the saturation regime, which might be caused by a hot carrier effect and/or selfheating effects [25][26][27][28]. Under such effects, charge trapping occurs, resulting in a positive threshold voltage shift and a slight decrease in I D .…”

AlGaN/GaN Transistors and Circuits

“…Gates widths of 0.6 -0.8 µm are routinely obtained with excellent yield. Passivation is applied as described previously (8), and vias to the ohmic and gate metallizations are formed using ICP etching in O 2 /C 4 F 8 . Thin film resistors of 50 Ω/sq are formed by deposition of 25 nm of NiCr.…”

Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications

“…Thus, techniques of surface treatment, damage-free gate recess, and dielectric passivation have been proposed to suppress the possible damage that causes the current collapse phenomenon [ 9 , 10 , 11 , 12 , 13 , 14 , 15 ]. There are various surface treatments and cleaning methods, such as UV/ozone [ 16 ], wet chemical [ 17 ], plasma [ 18 ], descum [ 19 ] and O 2 treatment [ 20 ] which have been adopted for the improvement of the surface states. For instance, with the SF 6 plasma treatment, the gate leakage and pulse I–V characteristics were improved effectively due to the reduction in the amount of carbon on the semiconductor surface [ 18 ].…”