Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications

Wang, Chun; Chen, Yu-Chiao; Hsu, Heng‐Tung; Tsao, Yi‐Fan; Lin, Yueh Chin; Dee, Chang Fu; Chang, En-Chih

doi:10.3390/ma14216558

Cited by 3 publications

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Low-damage interface enhancement-mode AlN/GaN high electron mobility transistors with 41.6% PAE at 30 GHz

Liu 刘,

Zhu 祝,

Guo 郭

et al. 2023

Chinese Phys. B

View full text Add to dashboard Cite

This paper reports a low-damage interface treatment process for AlN/GaN high-electron-mobility transistors (HEMTs) and demonstrates the excellent power characteristics of radio frequency (RF) enhancement-mode (E-mode) AlN/GaN HEMTs. An RF E-mode device fabricated by remote plasma oxidation (RPO) treatment with 2.9-nm AlN barrier layer at 300 ℃. The device with a gate length of 0.12-μm has a threshold voltage (Vth) of 0.5 V, a maximum saturation current of 1.16 A/mm, a high Ion/Ioff ratio of 1*108, and a 440 mS/mm peak transconductance. During continuous wave (CW) power testing, it demonstrated a power added efficiency of 61.9% and a power density of 1.38 W/mm at 3.6 GHz, and a power added efficiency of 41.6% and a power density of 0.85 W/mm at 30 GHz. Furthermore, RPO treatment improves the mobility of RF E-mode AlN/GaN HEMTs. All results show that the RPO processing method has good applicability for scaling ultrathin barrier E-mode AlN/GaN HEMTs for 5G compliable frequency ranging from sub-6 GHz to Ka-band.

show abstract

Low-damage interface enhancement-mode AlN/GaN high electron mobility transistors with 41.6% PAE at 30 GHz

Liu 刘,

Zhu 祝,

Guo 郭

et al. 2023

Chinese Phys. B

View full text Add to dashboard Cite

show abstract

700 V/2.5 A Normally-off Ultrathin-barrier AlGaN(<6nm)/GaN MIS-HEMTs with Improved Gate Overdrive Window and PBTI

Luan

Huang

Yao

et al. 2023

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

View full text Add to dashboard Cite

Remarkable Reduction in IG with an Explicit Investigation of the Leakage Conduction Mechanisms in a Dual Surface-Modified Al2O3/SiO2 Stack Layer AlGaN/GaN MOS-HEMT

et al. 2022

View full text Add to dashboard Cite

We demonstrated the performance of an Al2O3/SiO2 stack layer AlGaN/GaN metal–oxide semiconductor (MOS) high-electron-mobility transistor (HEMT) combined with a dual surface treatment that used tetramethylammonium hydroxide (TMAH) and hydrochloric acid (HCl) with post-gate annealing (PGA) modulation at 400 °C for 10 min. A remarkable reduction in the reverse gate leakage current (IG) up to 1.5×10−12 A/mm (@ VG = −12 V) was observed in the stack layer MOS-HEMT due to the combined treatment. The performance of the dual surface-treated MOS–HEMT was significantly improved, particularly in terms of hysteresis, gate leakage, and subthreshold characteristics, with optimized gate annealing treatment. In addition, an organized gate leakage conduction mechanism in the AlGaN/GaN MOS–HEMT with the Al2O3/SiO2 stack gate dielectric layer was investigated before and after gate annealing treatment and compared with the conventional Schottky gate. The conduction mechanism in the reverse gate bias was Poole–Frankel emission for the Schottky-gate HEMT and the MOS–HEMT before annealing. The dominant conduction mechanism was ohmic/Poole-Frankel at low/medium forward bias. Meanwhile, gate leakage was governed by the hopping conduction mechanism in the MOS–HEMT without gate annealing modulation at a higher forward bias. After post-gate annealing (PGA) treatment, however, the leakage conduction mechanism was dominated by trap-assisted tunneling at the low to medium forward bias region and by Fowler–Nordheim tunneling at the higher forward bias region. Moreover, a decent product of maximum oscillation frequency and gate length (fmax × LG) was found to reach 27.16 GHz∙µm for the stack layer MOS–HEMT with PGA modulation. The dual surface-treated Al2O3/SiO2 stack layer MOS–HEMT with PGA modulation exhibited decent performance with an IDMAX of 720 mA/mm, a peak extrinsic transconductance (GMMAX) of 120 mS/mm, a threshold voltage (VTH) of −4.8 V, a higher ION/IOFF ratio of approximately 1.2×109, a subthreshold swing of 82 mV/dec, and a cutoff frequency(ft)/maximum frequency of (fmax) of 7.5/13.58 GHz.

show abstract

Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications

Cited by 3 publications

References 26 publications

Low-damage interface enhancement-mode AlN/GaN high electron mobility transistors with 41.6% PAE at 30 GHz

Low-damage interface enhancement-mode AlN/GaN high electron mobility transistors with 41.6% PAE at 30 GHz

700 V/2.5 A Normally-off Ultrathin-barrier AlGaN(<6nm)/GaN MIS-HEMTs with Improved Gate Overdrive Window and PBTI

Remarkable Reduction in IG with an Explicit Investigation of the Leakage Conduction Mechanisms in a Dual Surface-Modified Al2O3/SiO2 Stack Layer AlGaN/GaN MOS-HEMT

Contact Info

Product

Resources

About