Oxide-Based Electric-Double-Layer Thin-Film Transistors on a Flexible Substrate

Cai, Wensi; Zhang, Jiawei; Wilson, Joshua; Ma, Xiaochen; Wang, Hanbin; Zhang, Xijian; Xin, Qian; Song, Aimin

doi:10.1109/led.2017.2768822

Cited by 28 publications

(17 citation statements)

References 39 publications

(42 reference statements)

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“…In [17], the electron mobility reported was close to 10 cm 2 /Vs for zinc oxynitride TFTs deposited at 50 ºC and annealed at 350 ºC. Moreover, the electron mobility extracted in the flexible Zn 3 N 2 TFTs is similar to that reported in oxide-based flexible TFTs [18,19] and better than pentacene flexible TFTs [20]. Also, the results obtained are better than those reported in our previous Zn 3 N 2 TFTs on silicon wafers [8].…”

Section: Resultssupporting

confidence: 73%

Flexible Zinc Nitride Thin-Film Transistors Using Spin-On Glass as Gate Insulator

Dominguez

Pau

Redondo-Cubero

2018

IEEE Trans. Electron Devices

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In this work, Zinc Nitride (Zn3N2) based flexible thin film transistors (TFTs) are presented. The zinc nitride thin film is deposited by magnetron radio-frequency sputtering at room temperature, while spin-on glass and aluminum were used as gate insulator and source/drain electrode, respectively. Polyethylene terephthalate is used as flexible substrate. The flexible Zn3N2 TFTs were characterized while bent to 5 mm tensile radius. The flexible TFTs exhibit an electron mobility of 3.8 cm 2 /Vs and an on/off current ratio close to 10 5 after several cycles of bending and being exposed to air ambient for 30 days.

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Section: Resultssupporting

confidence: 73%

Flexible Zinc Nitride Thin-Film Transistors Using Spin-On Glass as Gate Insulator

Dominguez

Pau

Redondo-Cubero

2018

IEEE Trans. Electron Devices

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“…The threshold voltage difference between TFT1 and TFT2 is found to be ~ 0.4 V. The linear mobility, µlin, and saturation mobility, µsat, are calculated to be 6.6 and 6.1 cm 2 /Vs for TFT1, and 5.4 and 5 cm 2 /Vs for TFT2. The electrical properties of both devices are comparable to or even better than most of the low-voltage IGZO TFTs reported previously [11,[16][17][18][19], demonstrating the potential for embedding in circuits with low-voltage operations.…”

Section: Resultssupporting

confidence: 52%

Low-Voltage, Full-Swing InGaZnO-Based Inverters Enabled by Solution-Processed, Ultra-Thin Al_xO_y

Cai

Zhang

Wilson

et al. 2019

IEEE Electron Device Lett.

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“…For instance, a 200 nm thick polymethyl methacrylate (PMMA) layer spin coated onto a PEN substrate could effectively improve the substrate smoothness. [40] To combine the advantages of both inorganic and organic buffers, a hybrid barrier layer composed of 30 nm thick inorganic (Al 2 O 3 ) and 3.6 μm thick organic (TR-8857-SA7, synthesized by Dongjin Semichem Company Ltd) layers was introduced. [31] The spincoated organic and ALD inorganic barrier layers together obtained a smooth surface and a reduced moisture diffusion rate.…”

Section: Buffer Layermentioning

confidence: 99%

Recent Developments of Flexible InGaZnO Thin‐Film Transistors

Song

Huang

Han

et al. 2021

Physica Status Solidi (a)

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Due to the advantages of being light, conformable, nonfragile, and bendable, flexible electronic devices have been considered for various applications such as flexible displays, bendable memories, e-textiles, radio frequency identifications (RFIDs), artificial skin/muscles, and wearable electronics. [1,2] Compared to rigid devices, the main challenges of flexible devices are finding suitable materials and fabrication methods to overcome the inherent barrier of low glass-transition temperature (T g ) for flexible substrates.Organic small molecules and polymers are flexible, but the corresponding devices are subject to issues resulting from short lifetime and difficult packaging. Conventional hydrogenated amorphoussilicon (a-Si:H) thin-film transistors (TFTs) can be prepared on flexible plastic substrates due to the low processing temperature of plasma-enhanced chemical vapor deposition (PECVD) (<200 C). [3] However, reduced carrier mobility and unstable characteristics under gate-bias stress limit their applications in flexible electronics. [4] Although low-temperature polysilicon (LTPS) TFTs show high mobility and stable characteristics, they are still unsuitable for flexible devices due to the crystallization temperature of polysilicon being higher than the T g of plastic substrates. [5,6] In addition, nanocrystalline-silicon (nc-Si) TFTs can show both good device stability and high carrier mobility (>10 2 cm 2 V À1 s À1 ). However, their high cost is a huge obstacle for industrial production, and the growth rate of nc-Si still requires further enhancement.Transparent oxide semiconductors (TOSs) have attracted considerable research interest because of their superior controllability in carrier generation and excellent optical transparency in the whole visible region. TFTs based on TOSs, such as InGaZnO, GaSnZnO, and AlSnZnInO, have been intensively studied due to the lower processing temperature than nc-Si TFTs, better uniformity than LTPS TFTs, and higher mobility and better stability than a-Si:H TFTs. [7][8][9] Among the state-of-the-art semiconductor materials, amorphous InGaZnO (a-IGZO), which was first fabricated by Nomura et al. in 2003, [10] is one of the most promising options, with an a-IGZO TFT successfully prepared on a flexible polyethylene terephthalate (PET)

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Oxide-Based Electric-Double-Layer Thin-Film Transistors on a Flexible Substrate

Cited by 28 publications

References 39 publications

Flexible Zinc Nitride Thin-Film Transistors Using Spin-On Glass as Gate Insulator

Flexible Zinc Nitride Thin-Film Transistors Using Spin-On Glass as Gate Insulator

Low-Voltage, Full-Swing InGaZnO-Based Inverters Enabled by Solution-Processed, Ultra-Thin Al_xO_y

Recent Developments of Flexible InGaZnO Thin‐Film Transistors

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Oxide-Based Electric-Double-Layer Thin-Film Transistors on a Flexible Substrate

Cited by 28 publications

References 39 publications

Flexible Zinc Nitride Thin-Film Transistors Using Spin-On Glass as Gate Insulator

Flexible Zinc Nitride Thin-Film Transistors Using Spin-On Glass as Gate Insulator

Low-Voltage, Full-Swing InGaZnO-Based Inverters Enabled by Solution-Processed, Ultra-Thin AlxOy

Recent Developments of Flexible InGaZnO Thin‐Film Transistors

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Low-Voltage, Full-Swing InGaZnO-Based Inverters Enabled by Solution-Processed, Ultra-Thin Al_xO_y