The Effect of Sputtering Parameters on the Film Properties of Molybdenum Back Contact for CIGS Solar Cells

Abstract

Molybdenum (Mo) thin films are widely used as a back contact for CIGS-based solar cells. This paper determines the optimal settings for the sputtering parameters for an Mo thin film prepared on soda lime glass substrates, using direct current (dc) magnetron sputtering, with a metal Mo target, in an argon gas environment. A Taguchi method with an L9orthogonal array, the signal-to-noise ratio, and an analysis of variances is used to determine the performance characteristics of the coating operation. The main sputtering parameters, such as working pressure (mTorr), dc power (W), and substrate temperature (°C), are optimized with respect to the structural features, surface morphology, and electrical properties of the Mo films. An adhesive tape test is performed on each film to determine the adhesion strength of the films. The experimental results show that the working pressure has the dominant effect on electrical resistivity and reflectance. The intensity of the main peak (110) for the Mo film increases and the full width at half maximum decreases gradually as the sputtering power is increased. Additionally, the application of an Mo bilayer demonstrates good adherence and low resistivity.

A combined Na and Cl treatment to promote grain growth in MOCVD grown CdTe thin films

“…For a given deposition pressure the Mo film resistivity reduces as power increases in agreement with other reports [20][21][22]. …”

Magnetron Sputtering for ZnO:Ga Scintillation Film Production and Its Application Research Status in Nuclear Detection

“…Substrates and targets are the material basis for preparing thin films by sputtering, and they are the primary factors to be considered for magnetron sputtering [82]. Substrate temperature directly affects the crystalline phase and crystal structure of the deposited films, so substrate temperature is critical for the photoelectrical properties of film [75,82].…”

“…Miyaka [85] reported that the increase of substrate temperature is helpful for Zn's replacement by Ga and the improvement of crystal quality. Higher substrate temperature helps the desorption of adsorbed oxygen in grain boundaries, which can effectively prevent the formation of Ga2O3 in the Substrates and targets are the material basis for preparing thin films by sputtering, and they are the primary factors to be considered for magnetron sputtering [82]. Substrate temperature directly affects the crystalline phase and crystal structure of the deposited films, so substrate temperature is critical for the photoelectrical properties of film [75,82].…”

“…Higher substrate temperature helps the desorption of adsorbed oxygen in grain boundaries, which can effectively prevent the formation of Ga2O3 in the Substrates and targets are the material basis for preparing thin films by sputtering, and they are the primary factors to be considered for magnetron sputtering [82]. Substrate temperature directly affects the crystalline phase and crystal structure of the deposited films, so substrate temperature is critical for the photoelectrical properties of film [75,82]. When the substrate temperature is low, which means that the particles sputtered onto the substrate have less kinetic energy and the mobility of surface atoms is low, low-density film, rough surface, and porous amorphous structure are easily formed [75].…”

Improved Performance for Dye-Sensitized Solar Cells Using a Compact TiO2Layer Grown by Sputtering

“…Since the first report of a DSSC by O'Regan and Grätzel, in 1991 [8], they have been intensively studied as a potential replacement for standard solar cells because of their relatively high efficiency and low cost [9], compared with p-n junction photovoltaic devices [10,11]. A typical DSSC consists of dye molecules that act as sensitizers, a porous TiO 2 layer, a fluorine-doped tin oxide (FTO) substrate, an electrolyte charge carrier, and a platinized FTO substrate as a so-called counter electrode or cathode.…”