The effect of rapid thermal treatments on the formation of shallow junctions by implanting boron and BF2+ ions into (100) silicon through a protecting mask

Kaabi, L.; Remaki, B.; Gontrand, Christian; Lo, Patrick; Balland, B.

doi:10.1016/0168-583x(95)01424-1

Cited by 3 publications

(4 citation statements)

References 19 publications

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“…In this work the experimental results published in Ref. 6 were accepted, reporting weakening of boron diffusion by the fluorine.…”

mentioning

confidence: 65%

“…1 -3 According to literature data, two methods proved to be effective in overcoming this undesired phenomenon: applying a protective oxide layer on top of the silicon crystal; 4,5 and implanting BF 2 C instead of elementary boron. 6 This work aims to find a qualitative thermodynamic explanation as to why the silica protective layer and the presence of fluorine can slow down the anomalous fast diffusion of boron.…”

Section: Introductionmentioning

confidence: 99%

“…The simplified calculations reveal that boron has a tendency to form solid-state compounds, e.g. SiB 6 at the temperature of the RTA. These compounds remain blocked in the solid.…”

mentioning

confidence: 99%

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Thermodynamic approach to the redistribution of boron and fluorine implanted at the interface of an SiO2/Si system

Réti

Sassi

Kaabi

et al. 2000

Surf. Interface Anal.

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In microelectronics, during fabrication of ultrashallow p-n junctions boron is implanted in a silicon monocrystal. However, the subsequent rapid thermal annealing (RTA) causes anomalous fast diffusion (transient enhanced diffusion, TED) of the boron inwards in the crystal, hindering the formation of the desired ultrashallow junction. It was found that this accelerated diffusion can be overcome by applying a silica protective layer on top of the monocrystal and implanting BF 2 Y instead of elementary boron. This work offers a thermodynamic explanation as to why the silica layer and the presence of fluorine slow down the TED of boron. The nature, direction and magnitude of the thermodynamic forces controlling the processes are examined by two methods of approach. First, the problem is treated as the segregation-desegregation of boron at the interface, governed by excess surface Gibbs free energy of the components in the SiO 2 (B)-Si(B)-Si 'sandwich' structure. Second, the thermodynamic probability of solid-phase chemical interactions is considered and calculated by computer program. The effect of fluorine is treated according to its reaction with the silicon interstitials.

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“…In this work the experimental results published in Ref. 6 were accepted, reporting weakening of boron diffusion by the fluorine.…”

mentioning

confidence: 65%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Thermodynamic approach to the redistribution of boron and fluorine implanted at the interface of an SiO2/Si system

Réti

Sassi

Kaabi

et al. 2000

Surf. Interface Anal.

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“…There are a number of technological parameters and methods which can be varied for this purpose: ion energy 2 and ion dose rate, 3 implantation through dielectric coatings, 4 and metal contacts, [5][6][7] implantation into deposited polysilicon, 8 utilization of the rapid thermal annealing ͑RTA͒ process, 9,10 temperature and time variation in a schedule of a conventional annealing, 11,12 annealing in vacuum, 13 using multiple implant/anneal steps, 14 multiple-species ion implantation [15][16][17] including separate implantation of (In ϩ ϩB ϩ ), 18 (B ϩ ϩF ϩ ), 19 and (F ϩ ϩB ϩ ) ions, 20 etc. All of these techniques are directed at decreasing the thickness of B atoms profile after implantation and annealing: to reducing B ϩ ions projective range in silicon and to suppressing B atoms transient diffusion.…”

Section: Introductionmentioning

confidence: 99%

Harnessing reverse annealing phenomenon for shallow p-n junction formation

Krasnobaev

Cuomo

Vyletalina

1997

Journal of Applied Physics

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Monocrystalline silicon was implanted with 60 keV fluorine and 20 keV boron ions and annealed. Carrier profile, fluorine and boron redistribution, and the parameters of p+-n junctions were investigated. In ion implanted Si two specific regions were observed in which peculiarities in carrier concentration, resistivity, and F atoms redistribution occurred. It was reasoned that the “under-surface” specific region is enriched with vacancy-type defects while the “amorphous/crystalline (a/c) interface” region is enriched with interstitial type defects. After annealing at a temperature corresponding to the reverse annealing phenomenon, boron atoms were activated in the “under-surface” and deactivated in the “a/c interface” region. The possibility of PMOS transistor fabrication with ultrashallow p+-n junction (60 nm) and low leakage current by F++B+ implantation and low temperature (600–700) °C annealing by using this phenomenon was demonstrated.

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Fabrication and characteristics of varactor diode for UHF TV tuner operated within ultra-low tuning voltage

Kim¹,

Sohn

Choi

2007

Electron. Lett.

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The effect of rapid thermal treatments on the formation of shallow junctions by implanting boron and BF2+ ions into (100) silicon through a protecting mask

Cited by 3 publications

References 19 publications

Thermodynamic approach to the redistribution of boron and fluorine implanted at the interface of an SiO2/Si system

Thermodynamic approach to the redistribution of boron and fluorine implanted at the interface of an SiO2/Si system

Harnessing reverse annealing phenomenon for shallow p-n junction formation

Fabrication and characteristics of varactor diode for UHF TV tuner operated within ultra-low tuning voltage

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