Fabrication and characteristics of varactor diode for UHF TV tuner operated within ultra-low tuning voltage

Kim, H.S.; Sohn, Young-Soo; Choi, Seon Gyu

doi:10.1049/el:20070081

Cited by 2 publications

(1 citation statement)

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“…The improved performance of FMCW radar system necessitates the development of a waveguide VCO with high linearity and a wide bandwidth, which in turn demands the need for a high‐performance varactor diode . One very attractive feature of varactor diodes is their ability to electronically tune a given circuit to different frequencies by changing the reverse‐bias conditions . Thus, the important parameters in such devices are the capacitance–voltage characteristics as well as the breakdown voltage.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of GaAs varactor diode with hyperabrupt doping profile

Heo

Hong

Choi

et al. 2014

Phys. Status Solidi A

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We investigate the performance of hyperabrupt doping profile based GaAs varactor diodes. Epitaxially grown GaAs nn+ devices, having an intentionally graded n‐active layer doping concentration, exhibit significant improvements in the breakdown voltage and capacitance relative to flat n‐active layer devices. It is found that the varactor diodes with a hyperabrupt doping profile are effective in shifting the breakdown voltage. Moreover, the capacitance in the hyperabrupt graded junction is comparatively more dependent on the reverse‐bias voltage than that in the uniformly doped junction. Experimental results indicate a maximum reverse breakdown voltage of 40 V at a leakage current of 165 µA. Furthermore, the maximum and minimum capacitances are 3.88 and 0.72 pF, respectively, for an anode diameter of 70 µm, resulting in a Cmax/Cmin ratio of 5.39. Packaged GaAs varactor diode for VCO applications.

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Section: Introductionmentioning

confidence: 99%