The Effect of Pressure on Deep Impurity States with Large Lattice Relaxation

Porowski, S.; Trzeciakowski, Witold

doi:10.1002/pssb.2221280102

Cited by 16 publications

(3 citation statements)

References 19 publications

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“…This local high density of deep levels associated with dislocations can lead to severe band bendings and a shift of the relative positions of the Fermi level and the deep levels controlling the dislocation velocity can occur. The high hydrostatic stresses under the indenter or in confined samples can also lead to shift of energy levels [91].…”

Section: Concluding Remarks On Low Temperaturementioning

confidence: 99%

Dislocations and plasticity in semiconductors. II. The relation between dislocation dynamics and plastic deformation

Rabier

George

1987

Rev. Phys. Appl. (Paris)

102

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Overview article Résumé. 2014 Dans cette seconde partie on examine le comportement mécanique des semi-conducteurs élémentaires (ESC) et composés III-V (CSC). La forte influence de la température sur la courbe contraintedéformation est rappelée et l'accent est mis sur le lien entre la limite élastique inférieure et la mobilité des dislocations aux températures moyennes. Dans Si, une prédéformation bien choisie conduit à une situation très favorable où l'on peut mesurer à la fois la densité des dislocations mobiles et les contraintes locales et où les paramètres d'activation à la limite élastique inférieure sont ceux observés pour le glissement des dislocations. Dans les CSC, la très grande différence de mobilité des dislocations 03B1 et 03B2 peut conduire à des effets de polarité et les paramètres d'activation obtenus sont assez différents de ceux déduits des mesures de vitesse. En général, 1. Général features of the stress-strain curve.

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Section: Concluding Remarks On Low Temperaturementioning

confidence: 99%

Dislocations and plasticity in semiconductors. II. The relation between dislocation dynamics and plastic deformation

Rabier

George

1987

Rev. Phys. Appl. (Paris)

102

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“…The metastable decrease of the twodimensional carrier concentration was observed when the GB was cooled under high hydrostatic pressure. Such an effect is typical for systems containing electron traps with large lattice relaxation, which were successfully investigated by means of optical methods in many semiconduction [3]. The purpose of the present work is to examine the optical properties of the HgCdMnTe bicrystals by means of the photovoltaic effect (PVE).…”

Section: Introductionmentioning

confidence: 99%

Optical Studies of HgCdMnTe Bicrystals

1991

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“…semiconductors as it provides much information both in A1GaAs and A11nAs doped 'layers, which moveS on the degree of localisation of the state and its cou-down into the gap re1ative to the r minimum when piing to the lattice [2]. In the last few years, hydrostatic Pressure is app1ied.…”

Section: Introduction 2 2d Systems Controlled By Pressure-dependentmentioning

confidence: 99%