The effect of optical intensity on the photoresponse of the GaAs mesfet

Abstract

This article is concerned with the effect optical intensity has on the frequency response, gain, and bandwidth of the GaAs MESFET when used as an optical detector. Measurements show that the photoresponse gain can be increased by 10 dB as the optical intensity is lowered, while the bandwidth of the MESFET can be increased by an order of magnitude with an increase in optical power. © 1993 John Wiley & sons, Inc.

Noise modeling of an optically controlled MESFET (OPFET)

“…It is understood that received optical signal generates an electron-hole pair in the semiconductor, resulting in the modulation of the channel conductivity (photoconductive effect) and the channel conductance through a development of a forward photovoltage (photovolatic effect). The details of the studies and analysis of MESFET photodetector are available in the literature [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. The present study is confined to the noise analysis of OPFET.…”

“…Optically controlled field-effect transistors (OPFETs) fabricated with Schottky gate configuration have drawn considerable attention in recent years due to their potential application as optically controlled microwave devices, including photodetectors in longhaul optical communication systems [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. Optically controlled MESFETs are particularly suitable for application in microwave monolithic integrated circuits (MMICs) [5,19] and optoelectonic integrated circuits (OEICs) [20] because of their integrated circuit compatibility.…”

“…Optically controlled MESFETs are particularly suitable for application in microwave monolithic integrated circuits (MMICs) [5,19] and optoelectonic integrated circuits (OEICs) [20] because of their integrated circuit compatibility. A number of theoretical and experimental works have been carried out to examine the characteristics of the device in the illuminated condition [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. The studies reported so far reveal that both the dc as well as microwave characteristics of the device change when the device is exposed to optical radiation of suitable wavelength.…”