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We investigate the dependence of carrier lifetimes in radiation-damaged, GaAs on proton implantation dose by means of time-resolved reflectivity and photoconductivity experiments with subpicosecond resolution. The carrier lifetimes decrease with increasing implantation dose at low implantation levels whereas beyond the ‘‘amorphization dose’’ a saturation at 0.5 ps can be observed due to a saturation of the defect density.

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We investigate the effects of carrier capture and re-emission on the electrical impedance, equivalent circuit, and modulation response of quantum- well (QW) laser diodes.The electrical impedance is shown to be a sensitive function of the time constants associated with carrier capture/transport and carrier re-emission. We compare the theoretical results with measured values of the electrical impedance of high-speed InGaAs-GaAs multi pie-quantum-well lasers fabricated using different epilayer structures with a common lateral structure. The experimental results agree well with the theoretical model, allowing us to extract the effective carrier escape time and the effective carrier lifetime in the QW's, and to estimate the effective carrier captureltransport time