The effect of N+-implanted Si(111) substrate and buffer layer on GaN films

Koh, Eui Kwan; Park, Young Ju; Kim, Eun Kyu; Park, Chan Soo; Lee, Suk Hun; Lee, Jun Young; Choh, Sung Ho

doi:10.1016/s0022-0248(00)00550-9

Cited by 21 publications

(5 citation statements)

References 16 publications

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“…Ion implantation into the Si substrate has been used to enhance GaN growth by several groups; they used the ion-implanted Si layer as a buffer layer to relax the film stress. 8,9) Our research on the influence of CID density on crack density was motivated by their studies, even though our results somewhat contradict to theirs. However, a direct comparison cannot be made because of differences in experimental method.…”

Section: Introductioncontrasting

confidence: 69%

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Influence of the Density of Crack-Initiating Defects on Crack Spacing for GaN Films on Si(111) Substrate

Kim¹,

Jang²,

Jhin

et al. 2010

Jpn. J. Appl. Phys.

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This study examines the cracking of GaN films grown on Si(111) substrates, with particular focus on the effect of the density of crack-initiating defects (CIDs) on the crack spacing. The relationship between the CID density and crack spacing was examined by comparing specimens of the same thickness and under the same stress but with different CID density. The CID density in the GaN layer was changed by varying the ion-implanted area using patterning prior to metal–organic chemical vapor deposition (MOCVD) growth. The crack spacing decreased with increasing CID density, but this effect could not be explained by the previous model. Therefore, a CID-density related factor, n d, was newly introduced to explain the crack spacing and film stress relationship.

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Section: Introductioncontrasting

confidence: 69%

“…This sample could be assumed to be a strain-free, single crystal of GaN due to its thickness. The in-plane biaxial stress, , was evaluated from the shift of a phonon mode, K (cm À1 /GPa) as 8) K ¼ À4:51: ð1Þ…”

Section: Resultsmentioning

confidence: 99%

Influence of the Density of Crack-Initiating Defects on Crack Spacing for GaN Films on Si(111) Substrate

Kim¹,

Jang²,

Jhin

et al. 2010

Jpn. J. Appl. Phys.

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“…Figure 3 shows the Raman shift of the E 2 phonon mode and biaxial stress in the layers as a function of nitrogen content in the carrier gas. It was reported by Koh et al [15] that in-plane biaxial stress (σ) is given by…”

Section: Methodsmentioning

confidence: 99%

Effect of carrier gas on GaN epilayer characteristics

Cho¹,

Hardtdegen²,

Kaluza³

et al. 2006

Phys. Status Solidi (c)

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Metalorganic vapor phase epitaxy (MOVPE) of GaN was performed using hydrogen (H 2 ), nitrogen (N 2 ) and H 2 /N 2 mixtures thereof as the carrier gas in the high temperature buffer growth range. The effect of carrier gas on the structural and morphological characteristics of the epilayers was systematically studied using interference and atomic force microscopy (AFM), photoluminescence (PL) measurements at 2 K, Raman spectroscopy and X-ray diffraction (XRD). The higher the N 2 content in the carrier gas, the more pinholes are observed, the lower compressive strain and the higher dislocation density in the layers. A carrier gas composition range was defined at which GaN layers with acceptable structural and morphological characteristics are achieved.

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“…MOVPE growth of GaN on such substrates resulted in high-quality material (corrected FWHM of the (0002) rocking curve of ~360 arcsec) comparable to GaN grown on 6H-SiC substrates. Another attempt to reduce the stress was tried with N + -implanted Si(111) substrates [104]. One method which we could successfully apply to grow crack-free LED structures is by patterning a silicon substrate [21,83].…”

Section: Thick Layers and Strain Engineeringmentioning

confidence: 99%

Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon

Dadgar

Strittmatter

Bläsing

et al. 2003

phys. stat. sol. (c)

127

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GaN growth on Si is very attractive for low-cost optoelectronics and high-frequency, high-power electronics. It also opens a route towards an integration with Si electronics. Early attempts to grow GaN on Si suffered from large lattice and thermal mismatch and the strong chemical reactivity of Ga and Si at elevated temperatures. The latter problem can be easily solved using gallium-free seed layers as nitrided AlAs and AlN. The key problem for device structure growth on Si is the thermal mismatch leading to cracks for layer thicknesses above 1 µm. Meanwhile, several concepts for strain engineering exist as patterning, Al(Ga)N/GaN superlattices, and low-temperature (LT) AlN interlayers which enable the growth of device-relevant GaN thicknesses. The high dislocation density in the heteropitaxial films can be reduced by several methods which are based on lateral epitaxial overgrowth using ex-situ masking or patterning and by in-situ methods as masking with monolayer thick SiN. With the latter method in combination with strain engineering by LT-AlN interlayers dislocation densities around 109 cm -2 can be achieved for 2.5 µm thick device structures.

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The effect of N+-implanted Si(111) substrate and buffer layer on GaN films

Cited by 21 publications

References 16 publications

Influence of the Density of Crack-Initiating Defects on Crack Spacing for GaN Films on Si(111) Substrate

Influence of the Density of Crack-Initiating Defects on Crack Spacing for GaN Films on Si(111) Substrate

Effect of carrier gas on GaN epilayer characteristics

Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon

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