The effect of low-energy ion bombardment on the density and crystal structure of thin films

Наумов, В. В.; Bochkarev, V. F.; Trushin, Oleg; Goryachev, Andrey; Khasanov, É. G.; Lebedev, A. A.; Kunitsyn, A. S.

doi:10.1134/1.1395124

Cited by 11 publications

(2 citation statements)

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“…In this case, the ionic species in the plasma used for AlN film deposition were surmised to be Ar + (atomic weight: 40), N 2 + (28), and N + ( 14), all attributed to the feed gases, as well as Al + (27), and the species impinging on the substrate during deposition are primarily Ar ions. In general, the densification and structural change of deposited films are attributed to bombardment by energetic ions (∼15 eV at the peak energy of ion energy distribution), 36) so the decrease in surface roughness in the present work is attributed to the impingement of Ar + ions on the substrate. Figure 10 shows the density of the AlN films estimated from the XRR spectra of the AlN films.…”

Section: Resultsmentioning

confidence: 80%

Low-temperature formation ofc-axis-oriented aluminum nitride thin films by plasma-assisted reactive pulsed-DC magnetron sputtering

Takenaka

Satake

Setsuhara

2017

Jpn. J. Appl. Phys.

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The low-temperature formation of c-axis-oriented aluminum nitride thin films was demonstrated by plasma-assisted reactive pulsed-DC magnetron sputtering. The effects of the duty cycle at the pulsed-DC voltage applied to the Al target on the properties of AlN films formed via inductively coupled plasma (ICP)-enhanced pulsed-DC magnetron sputtering deposition were investigated. With decreasing duty cycle at the target voltage, the peak intensity of AlN(0002) increased linearly. The surface roughness of AlN films decreased since there was an increase in film density owing to the impact of energetic ions on the films together with the enhancement of nitriding associated with the relative increase in N radical flux. The improvement of both the crystallinity and surface morphology of AlN films at low temperatures is considered to be caused by the difference between the relative flux values of ions and sputtered atoms.

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Section: Resultsmentioning

confidence: 80%

Low-temperature formation ofc-axis-oriented aluminum nitride thin films by plasma-assisted reactive pulsed-DC magnetron sputtering

Takenaka

Satake

Setsuhara

2017

Jpn. J. Appl. Phys.

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“…For example, the low energy ion bombardment during the film growth requires a voltage in the range of 10 to 150 V, and the ion etching and subimplanta tion require voltages of 400-800 V and >1 kV, respec tively [13][14][15].…”

Section: The Power Source Of the System For Ion Beam Treatment Of Submentioning

confidence: 99%

A modular bipolar power supply for high-power ion-plasma installations

2014

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The circuitry solutions, design, and main parameters of a modular pulse bipolar power supply unit for high power ion plasma facilities are described. The modular principle of designing power supplies provided their application in various processes. The results of tests of the developed device as the power supply of a magnetron sputtering system with a power of 60 kW and a high voltage power supply of the substrate bias voltage with a power of up to 40 kW are presented. The efficiency of applying bipolar pulses for preventing arcing at the magnetron cathode is experimentally demonstrated.

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Physical and mechanical properties of the Ti Zr1−N thin films

Каменева

Karmanov

2013

Journal of Alloys and Compounds

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The effect of low-energy ion bombardment on the density and crystal structure of thin films

Cited by 11 publications

References 11 publications

Low-temperature formation ofc-axis-oriented aluminum nitride thin films by plasma-assisted reactive pulsed-DC magnetron sputtering

Low-temperature formation ofc-axis-oriented aluminum nitride thin films by plasma-assisted reactive pulsed-DC magnetron sputtering

A modular bipolar power supply for high-power ion-plasma installations

Physical and mechanical properties of the Ti Zr1−N thin films

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