The effect of LaNiO3 bottom electrode thickness on ferroelectric and dielectric properties of (100) oriented PbZr0.53Ti0.47O3 films

Structural, ferroelectric and dielectric properties of In2O3:Sn (ITO) on PbZr0.53Ti0.47O3 (PZT)/Pt and annealing effect

“…As for the coercive fields, values of 100 kV/cm and 90 kV/cm were measured for Pt/PZT/Pt and ITO/PZT/Pt respectively. The values found in the present work are comparable to the one (E c = 107 kV/cm) reported by Pandey et al [13] in their PZT/ITO samples grown by the sol-gel technique and higher than those measured by Wang et al [15] (around 40 kV/cm) in the PZT/LNO prepared by the modified sol-gel process. Note that in our case, E c in ITO/PZT/Pt (90 kV/cm) is slightly smaller than E c in Pt/PZT/Pt (100 kV/cm).…”

Effect of LaNiO3 buffer layer thickness on the microstructure and electrical properties of (100)-oriented BaTiO3 thin films on Si substrate

“…the dielectric constant decreases and the dielectric loss increases much more rapidly with increasing the measuring frequency. For example, when the frequency increases from 10 3 Hz to 10 [21,22]. The enhanced dielectric properties of BTO with the increase of LNO buffer layer thickness is suggested due to the combination of improved electrical properties of LNO and improved microstructural properties of BTO, such as larger grain size, better crystallization quality and overcome of internal defects concentration.…”

Indentation modulus and hardness of Pb(Zr, Ti)O3 sol–gel films deposited on Pt and LaNiO3 electrodes

“…A post-annealing treatment of the electrodes is made to stabilize the structure. 21,22 The thickness of TiO x and Pt are 15 and 150 nm, respectively, the Pt film presents a (1 1 1) preferred orientation. The PZT films deposited on this type of electrode are (1 1 1) oriented whatever the deposition technique (sol-gel or sputtering 8 ).…”

“…21,22 The LNO films were prepared by spinning the precursor solution on SiO 2 /Si substrate at 3000 rpm for 30 s. Each annealing layer was dried at 200 • C for 180 s, then pre-fired at 400 • C for 180 s and finally annealed at 700 • C for 180 s (rapid thermal annealing). The LNO films are (0 0 1) preferred orientation.…”