Effect of LaNiO3 buffer layer thickness on the microstructure and electrical properties of (100)-oriented BaTiO3 thin films on Si substrate

Qiao, Li; Bi, Xiaojun

doi:10.1016/j.tsf.2008.12.056

Cited by 13 publications

(7 citation statements)

References 27 publications

(28 reference statements)

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“…The average grain size of (110)-SRO films was about 80 nm which is lower than 150 nm of (001)-SRO films. The difference in grain size of SRO films was attributed to the different interface between the deposited films and the substrates, which is similar to the previous results which reported that an increase of the LNO thickness promotes an increase of the grain size of the upper BaTiO 3 films [18]. Both the cross-sectional images of SRO films reveal dense microstructures, a uniform thickness of 240 nm, and a sharp interface with the LNO or the substrate.…”

Section: Resultssupporting

confidence: 88%

“…As LNO thickness increases, the (110) pc orientation was suppressed, but the (001) pc orientation was enhanced and completely (001) pc oriented SRO films were obtained when the thickness reached 300 nm. LNO films with different thickness have different crystallization quality and orientations, and they can directly affect the nucleation and growth dynamics of the sputtered atoms [18]. The position of the peaks for both SRO films on SiO 2 /Si (aliased as (110)-SRO) and on LNO300/SiO 2 /Si (aliased as (001)-SRO) indicate [19][20][21].…”

Section: Resultsmentioning

confidence: 99%

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Growth control of RF magnetron sputtered SrRuO3 thin films through the thickness of LaNiO3 seed layers

Zhu

Dong

Chen

et al. 2016

Ceramics International

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Section: Resultssupporting

confidence: 88%

Section: Resultsmentioning

confidence: 99%

Growth control of RF magnetron sputtered SrRuO3 thin films through the thickness of LaNiO3 seed layers

Zhu

Dong

Chen

et al. 2016

Ceramics International

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“…For ZnO , the optical properties were found to depend on the thickness of a buffer layer 55 . Also, when depositing BaTiO the electronic and structural properties were strongly influenced by the thickness of a LaNiO buffer layer on a Si substrate 59 . The broad range of preferential growth directions in our perovskite film without MAI evaporation onset delay point to different influences from subjacent ITO , np-SnO and C layers, where no dominating effect can be isolated.…”

Section: Discussionmentioning

confidence: 99%

Importance of methylammonium iodide partial pressure and evaporation onset for the growth of co-evaporated methylammonium lead iodide absorbers

Dolynchuk

Burwig

Vaghani

et al. 2021

Sci Rep

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Vacuum-based co-evaporation promises to bring perovskite solar cells to larger scales, but details of the film formation from the physical vapor phase are still underexplored. In this work, we investigate the growth of methylammonium lead iodide (MAPbI$$_3$$ 3 ) absorbers prepared by co-evaporation of methylammonium iodide (MAI) and lead iodide (PbI$$_2$$ 2 ) using an in situ X-ray diffraction setup. This setup allows us to characterize crystallization and phase evolution of the growing thin film. The total chamber pressure strongly increases during MAI evaporation. We therefore assume the total chamber pressure to be mainly built up by an MAI atmosphere during deposition and use it to control the MAI evaporation. At first, we optimize the MAI to PbI$$_2$$ 2 impingement ratios by varying the MAI pressure at a constant PbI$$_2$$ 2 flux rate. We find a strong dependence of the solar cell device performance on the chamber pressure achieving efficiencies > 14$$\%$$ % in a simple n-i-p structure. On the road to further optimizing the processing conditions we vary the onset time of the PbI$$_2$$ 2 and MAI deposition by delaying the start of the MAI evaporation by t = 0/8/16 min. This way, PbI$$_2$$ 2 nucleates as a seed layer with a thickness of up to approximately 20 nm during this initial stage. Device performance benefits from these PbI$$_2$$ 2 seed layers, which also induce strong preferential thin film orientation as evidenced by grazing incidence wide angle X-ray scattering (GIWAXS) measurements. Our insights into the growth of MAPbI$$_3$$ 3 thin films from the physical vapor phase help to understand the film formation mechanisms and contribute to the further development of MAPbI$$_3$$ 3 and related perovskite absorbers.

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“…Besides, it has been found that the crystallization temperature of ferroelectric films can be reduced by using buffer layer, because the crystallization nucleation of ferroelectric films is much easier on buffer layer than that on the Si or Pt substrate [14][15][16][17] . For example, Qiao et al 21 have reported (001)-oriented BT films can be induced by LaNiO 3 (LNO) buffer layer. For example, Qiao et al 21 have reported (001)-oriented BT films can be induced by LaNiO 3 (LNO) buffer layer.…”

Section: Introductionmentioning

confidence: 99%

Self-polarization induced by lattice mismatch and defect dipole alignment in (001) BaTiO₃/LaNiO₃ polycrystalline film prepared by magnetron sputtering at low temperature

Hou

Zhang

et al. 2015

RSC Adv.

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ARTICLE This journal isUpward self-polarization phenomenon was observed and studied in the highly (001)-oriented BaTiO 3 /LaNiO 3 polycrystalline film, and the polycrystalline film was in situ prepared by radio frequency magnetron sputtering at 400°C without post treatment. The low temperature crystallization and high orientation of BaTiO 3 polycrystalline film may be caused by the better compatibility between BaTiO 3 and LaNiO 3 . The upward self-polarization phenomena was characterized by piezoelectric force microscopy (PFM), and the coupling effects of low crystallization temperature, high (001) orientation, large compressive strain gradient and preferred orientation of defect dipoles are considered to be responsible for the upward self-polarization phenomena in the BaTiO 3 /LaNiO 3 polycrystalline film during the cooling process, especially when ferroelectric domains nucleate and grow near 120°C.

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Effect of LaNiO3 buffer layer thickness on the microstructure and electrical properties of (100)-oriented BaTiO3 thin films on Si substrate

Cited by 13 publications

References 27 publications

Growth control of RF magnetron sputtered SrRuO3 thin films through the thickness of LaNiO3 seed layers

Growth control of RF magnetron sputtered SrRuO3 thin films through the thickness of LaNiO3 seed layers

Importance of methylammonium iodide partial pressure and evaporation onset for the growth of co-evaporated methylammonium lead iodide absorbers

Self-polarization induced by lattice mismatch and defect dipole alignment in (001) BaTiO₃/LaNiO₃ polycrystalline film prepared by magnetron sputtering at low temperature

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Effect of LaNiO3 buffer layer thickness on the microstructure and electrical properties of (100)-oriented BaTiO3 thin films on Si substrate

Cited by 13 publications

References 27 publications

Growth control of RF magnetron sputtered SrRuO3 thin films through the thickness of LaNiO3 seed layers

Growth control of RF magnetron sputtered SrRuO3 thin films through the thickness of LaNiO3 seed layers

Importance of methylammonium iodide partial pressure and evaporation onset for the growth of co-evaporated methylammonium lead iodide absorbers

Self-polarization induced by lattice mismatch and defect dipole alignment in (001) BaTiO3/LaNiO3 polycrystalline film prepared by magnetron sputtering at low temperature

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Product

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Self-polarization induced by lattice mismatch and defect dipole alignment in (001) BaTiO₃/LaNiO₃ polycrystalline film prepared by magnetron sputtering at low temperature