Structural, ferroelectric and dielectric properties of In2O3:Sn (ITO) on PbZr0.53Ti0.47O3 (PZT)/Pt and annealing effect

Influence of buffer layer on structural, electrical and mechanical properties of PZT/NiTi thin film heterostructures

“…However, sample P 2 (Fig. 6(b)) indicates a normal ferroelectric behavior but the value of remnant polarization (P r = 9.5 lC/cm 2 ) was found to be much lower as compared to the typical value for PZT thin films [40]. This could be attributed to the presence of an interfacial reaction layer at the interface which offers sizable capacitance with the applied electric field.…”

Effect of excess Pb on ferroelectric characteristics of conductive Al-doped ZnO and Sn-doped In2O3 top electrodes in PbLaZrTiO x capacitors

“…3d) among all the AZO/PLZT/ Pt and ITO/PLZT/Pt capacitors. Kerkache et al [6] reported a Pr of 25 and 30 lCc m -2 for ITO/PZT (PbZr 0.53 Ti 0.47 O 3 , 300 nm)/Pt capacitors at an applied electric field of 90 kV cm -1 and 100 kV cm -1 , respectively. Rao et al [31] reported a Pr of 15 lCcm -2 at 6 V for ITO/ PZT/ITO capacitors.…”

“…In addition, FeRAM has the advantage of low voltage operation and high security (Kim and Song [3], Bez and Pirovano [4]). Recently, the use of conductive oxide material has become extremely desirable in ferroelectric capacitors because it is a non-noble metal, cheap, easily etched, and because oxygen compensation and alternatives for noble metal electrodes have been studied, such as aluminum-doped zinc oxide (AZO) fabricated by pulsed laser deposition (PLD) [5], tin-doped indium oxide (ITO) fabricated by RF sputtering [6] and lanthanum-doped nickel oxide (LNO) fabricated by chemical solution deposition (CSD) [7].…”

Preparation of ferroelectric BaTi2O5 thin films on Pt(111)/Ti/SiO2/Si substrates by pulsed laser deposition

“…In particular, BaTiO 3 , PbTiO 3 and PbZr 1−x Ti x O 3 have been extensively studied for their high dielectric constant and significant ferroelectricity [3][4][5][6][7][8]. However, these materials have drawbacks of low Curie temperature for BaTiO 3 (T C ≈ 403 K) and environmentally unfriendly element (Pb) contained in PbTiO 3 and PbZr 1−x Ti x O 3 .…”