The effect of indium doping concentration on the electrical and dielectric properties of Al/In:ZnO/p-Si heterojunctions

Yıldırım, Murat; Erdal, Mehmet Okan; Koçyiğit, Adem

doi:10.1016/j.physb.2019.07.055

Cited by 8 publications

(6 citation statements)

References 40 publications

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“…Although the e 00 values were affected by the frequency and voltage changes in the inversion region, they stayed without change in the accumulation region. These changes at the e 00 values can be ascribed to the series resistance effect and interface states which cannot be able to follow the ac signal towards higher frequencies [15,[30][31][32].…”

Section: Resultsmentioning

confidence: 99%

“…The native or external interfacial layers have an important role in metal-semiconductor devices which are used in many electronic devices because their characteristics can be controlled by various interfacial layers such as metal oxide, polymer, or insulator [9][10][11][12]. These interfacial layers affect the performance and reliability of these devices depending on their formations, inhomogeneous barrier heights together with parasitic resistances and the interface states distribution [13][14][15]. Thus, several interfacial layers are used and investigated to passivate the active dangling bonds at the semiconductor surface and improve the electrical characteristics of these devices [16].…”

Section: Introductionmentioning

confidence: 99%

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The dielectric performance of Au/CuCo5S8/p-Si heterojunction for various frequencies

Koçyiğit

Yıldız

Sarılmaz

et al. 2020

J Mater Sci: Mater Electron

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CuCo 5 S 8 thiospinel nanocrystals were synthesized by a modified colloidal method, and then it was used as an interfacial layer in the Au/CuCo 5 S 8 /p-Si heterojunction device to characterize the dielectric performance of the CuCo 5 S 8 thiospinel. X-ray diffractometer (XRD) was performed to investigate structural behaviors of the CuCo 5 S 8 , and the results confirmed the crystalline structure of the CuCo 5 S 8 . While the detailed structures of the CuCo 5 S 8 thiospinel were investigated by transmission electron microscope (TEM), the surface morphology was obtained by scanning electron microscope (SEM). Furthermore, the composition of the CuCo 5 S 8 structures was studied and confirmed by the energy dispersive X-ray (EDX). The CuCo 5 S 8 thiospinel were deposited between the Au and p-Si to obtain Au/CuCo 5 S 8 /p-Si heterojunction. The impedance spectroscopy technique was employed to determine the voltage-and frequencydependent dielectric properties of the Au/CuCo 5 S 8 /p-Si heterojunction. While the frequency was changed from 100 kHz to 1 MHz with 100 kHz interval, the voltage was altered from -2.5 V to ? 2.5 V. The various dielectric parameters such as complex electric permittivity (dielectric constant (e 0 ) and dielectric loss (e 00 )), electric modulus (M 0 and M 00 ), and ac electrical conductivity (r) were extracted from the C-V and G-V measurements and discussed in details. The results highlighted that the Au/CuCo 5 S 8 /p-Si heterojunction device has the frequency-and voltage-dependent dielectric characteristics, and can be considered as switching applications.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

The dielectric performance of Au/CuCo5S8/p-Si heterojunction for various frequencies

Koçyiğit

Yıldız

Sarılmaz

et al. 2020

J Mater Sci: Mater Electron

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“…Although the interface is different, the methods of the heterojunction device are the same as in our previous studies. 15,16 The resulting structure was obtained as Au/CuCo 2 S 4 /p-Si. Here, a (100)-oriented p-type Si wafer with 7.15 9 10 15 cm 3 carrier concentration was sliced to 1.5 cm 2 pieces and used as substrate and semiconductor material.…”

Section: Methodsmentioning

confidence: 99%

“…This differences can be based to non-ideal diode structure and barrier inhomogeneity of the device. 15 The current transient measurements for light-on and light-off conditions show response to the light of an optoelectronic device. 37 The current transient plots of the Au/CuCo 2 S 4 /p-Si device have been shown in Fig.…”

Section: Cuco 2 S 4 May Cause a Barrier Between The Al And P-mentioning

confidence: 99%

Ternary CuCo2S4 Thiospinel Nanocrystal-Coated Photodiode with Improved Photoresponsivity and Acceptance Angles for Optoelectronic Applications

Yıldırım

Koçyiğit

Sarılmaz

et al. 2019

Journal of Elec Materi

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Ternary-structured thiospinels have attracted great attention in recent years for energy applications due to their attractive characteristics such as simple production, earth-abundant components and non-toxic nature. In this work, copper cobalt sulfide (CuCo 2 S 4 or carrollite) thiospinel nanocrystals were synthesized by a hot-injection method, and detailed electrical and optoelectronic characterizations were performed in a Schottky device. The synthesized nanocrystals were used as an interfacial layer between the Au metal and p-Si semiconductor to obtain an Au/CuCo 2 S 4 /p-Si device. The structural and morphological characterizations confirmed the crystallinity, nanostructure and composition of the CuCo 2 S 4 nanocrystals. The I-V and C-V measurements were employed to characterize the Au/CuCo 2 S 4 /p-Si device for various illumination intensities. The obtained device exhibited good rectifying and photodiode properties as well as good photocapacitance. The Au/CuCo 2 S 4 /p-Si device can be used and improved for optoelectronic applications.

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“…In order to improve electro-optic properties of ZnO containing devices, it can be doped or composed easily with other transition metals or organic materials [36][37][38][39][40][41]. Organic materials have attracted much interest for optoelectronic applications due to low cost, flexibility, and wearability of organic materials [42][43][44][45].…”

Section: Introductionmentioning

confidence: 99%

Effect of various PCBM doping on the interfacial layer of Al/PCBM:ZnO/p-Si photodiodes

Öztürk

2021

J Mater Sci: Mater Electron

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The light can be detected by various devices such as photoconductors, photodetectors, phototransistors, solar cells and photodiodes, and the light can be employed energy harvesting as well as sensing applications. Various materials can be utilized to raising of the efficiency of light-based devices. In present study, metalsemiconductor (MS) devices with various [6,6]-Phenyl C61-butyric acid methyl ester (PCBM) doped zinc oxide (ZnO) interfacial layer were fabricated for photodiode applications. Commercially purchased PCBM and ZnO were mixed in order to obtain undoped, 3%, 5%, and 10% PCBM doped ZnO interfacial layer for Al/PCBM:ZnO/p-Si devices. The obtained solutions were layered on the p-type silicon (p-Si) substrades by spin coating method. The thermal evaporation technique was utilized to deposit Al metal electrodes both back and front sides. The morphological properties of the fabricated devices were characterized by AFM. The morphological images of the AFM revealed that PCBM doping affected the surface morphology as well as surface roughness of the ZnO layers. I-V measurements were carried out in the dark and under varying illumination conditions for electrical properties. The devices exhibited good rectifying properties at around 10 3 rates, both dark and various illumination conditions, according to I-V graphs. The junction parameters of the produced devices were determined by using thermionic emission, Norde, and Cheung models from the I-V characteristics of the devices. The devices have high ideality factors and these values generally fluctuate with varying PCBM doping amounts. The current transient measurements show that PCBM doping provide increasing in the light response capacity. According to the results, the devices can be employed as photodiode and photodetector applications for the further works in the industry.

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The effect of indium doping concentration on the electrical and dielectric properties of Al/In:ZnO/p-Si heterojunctions

Cited by 8 publications

References 40 publications

The dielectric performance of Au/CuCo5S8/p-Si heterojunction for various frequencies

The dielectric performance of Au/CuCo5S8/p-Si heterojunction for various frequencies

Ternary CuCo2S4 Thiospinel Nanocrystal-Coated Photodiode with Improved Photoresponsivity and Acceptance Angles for Optoelectronic Applications

Effect of various PCBM doping on the interfacial layer of Al/PCBM:ZnO/p-Si photodiodes

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