The dielectric performance of Au/CuCo5S8/p-Si heterojunction for various frequencies

Abstract

CuCo 5 S 8 thiospinel nanocrystals were synthesized by a modified colloidal method, and then it was used as an interfacial layer in the Au/CuCo 5 S 8 /p-Si heterojunction device to characterize the dielectric performance of the CuCo 5 S 8 thiospinel. X-ray diffractometer (XRD) was performed to investigate structural behaviors of the CuCo 5 S 8 , and the results confirmed the crystalline structure of the CuCo 5 S 8 . While the detailed structures of the CuCo 5 S 8 thiospinel were investigated by transmission electron microscope (TEM), the surface morphology was obtained by scanning electron microscope (SEM). Furthermore, the composition of the CuCo 5 S 8 structures was studied and confirmed by the energy dispersive X-ray (EDX). The CuCo 5 S 8 thiospinel were deposited between the Au and p-Si to obtain Au/CuCo 5 S 8 /p-Si heterojunction. The impedance spectroscopy technique was employed to determine the voltage-and frequencydependent dielectric properties of the Au/CuCo 5 S 8 /p-Si heterojunction. While the frequency was changed from 100 kHz to 1 MHz with 100 kHz interval, the voltage was altered from -2.5 V to ? 2.5 V. The various dielectric parameters such as complex electric permittivity (dielectric constant (e 0 ) and dielectric loss (e 00 )), electric modulus (M 0 and M 00 ), and ac electrical conductivity (r) were extracted from the C-V and G-V measurements and discussed in details. The results highlighted that the Au/CuCo 5 S 8 /p-Si heterojunction device has the frequency-and voltage-dependent dielectric characteristics, and can be considered as switching applications.

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