The effect of high temperature annealing on Schottky diode characteristics of Au/n-Si contacts

Nuhoğlu, Çiğdem; Gülen, Y.

doi:10.1016/j.vacuum.2009.10.049

Cited by 18 publications

(11 citation statements)

References 15 publications

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“…We observe that whilst the ideality factor during annealing has an increasing trend, in the post annealing mode, it has a decreasing trend with increase in temperature. A similar increase in barrier height with temperature in the post annealing mode has been observed in Au/n-Si Schottky diodes and was explained in terms of metallic-like phases produced on the interface because of the annealing process [22]. This change in post annealing characteristics is of a low order of magnitude as shown in Fig.…”

Section: Resultssupporting

confidence: 78%

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The effect of high temperatures on the electrical characteristics of Au/n-GaAs Schottky diodes

Tunhuma

Auret

Legodi

et al. 2016

Physica B: Condensed Matter

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In this study, the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/n-GaAs Schottky diodes have been measured over a wide temperature range, 80 -480 K.The diodes were rectifying throughout the range and showed good thermal stability. Room temperature values for the ideality factor, I-V barrier height and C-V barrier height were found to be n = 1.10, = 0.85 eV and = 0.96 eV, respectively. increases and n decreases with an increase in temperature. We investigated the effect of elevated temperatures on the barrier height and ideality factor by measuring the diodes at a high temperature (annealing mode) then immediately afterwards measuring at room temperature (post annealing mode). The measurements indicate I-V characteristics that degrade permanently above 300 K. Permanent changes to the C-V characteristics were observed only above 400 K. We also noted a discrepancy in the C-V barrier height and carrier concentration between 340 and 400 K, which we attribute to the influence of the EL2 defect (positioned 0.83 eV below the conduction band minima) on the free carrier density. Consequently, we were able to fit the versus temperature curve into two regions with temperature coefficients -6.9×10 -4 eV/K and -2.2×10 -4 eV/K above and below 400 K.

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Section: Resultssupporting

confidence: 78%

“…The annealing behaviour of GaAs Schottky diodes has already been the subject of a number of investigations [18][19][20][21]. Changes brought about to the diode characteristics by thermal annealing have variously been attributed to solid-phase reactions, dispersion of native oxides and failure of diffusion barriers at the interface [21,22].…”

Section: Introductionmentioning

confidence: 99%

The effect of high temperatures on the electrical characteristics of Au/n-GaAs Schottky diodes

Tunhuma

Auret

Legodi

et al. 2016

Physica B: Condensed Matter

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“…Therefore, further studies are needed to clarify these results. by Serin [62], Nohoglu et al [63] and Opsomer et al [64]. This may be due to either presence of high density of compensating deep acceptor levels [62], possibly related to in-diffused Ir or the decrease in the dangling bonds due to annealing [63] and formation of Iridium germanide [39].…”

Section: Resultsmentioning

confidence: 99%

Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (100)

Chawanda

Coelho

Auret

et al. 2012

Journal of Alloys and Compounds

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Iridium (Ir) Schottky barrier diodes were deposited on bulk grown (100) Sbdoped n-type germanium by using the electron beam deposition system. Electrical characterization of these contacts using current-voltage (I-V) and capacitance-voltage (C-V) measurements was performed under various annealing conditions. The variation of the electrical properties of these Schottky diodes can be attributed to combined effects of interfacial reaction and phase transformation during the annealing process.Thermal stability of the Ir/n-Ge (100) was observed up to annealing temperature of 500 o C. Furthermore, structural characterization of these samples was performed by using a scanning electron microscopy (SEM) at different annealing temperatures.Results have also revealed that the onset temperature for agglomeration in a 20 nm Ir/n-Ge (100) system occurs between 600-700 o C.

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“…It is advantageous to use inorganic semiconductors with high mobility and organic material as active layer for producing low operating voltage devices. Besides, with the help of large area and pretty low cost fabricating techniques organic materials can be coated onto inorganic semiconductors or any other [11][12]. By changing thickness or chemical bonding of organic material one can optimize electronic and optical properties of OI contacts.…”

Section: Introductionmentioning

confidence: 99%

Optical, Electrical and Photoelectrical Properties of Quercetin-Co(ii) Complex/N-Si Organic-Inorganic Hybrid Device

Özaydın¹,

TOMBAK²,

Boğa³

et al. 2015

MEJS

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The effect of high temperature annealing on Schottky diode characteristics of Au/n-Si contacts

Cited by 18 publications

References 15 publications

The effect of high temperatures on the electrical characteristics of Au/n-GaAs Schottky diodes

The effect of high temperatures on the electrical characteristics of Au/n-GaAs Schottky diodes

Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (100)

Optical, Electrical and Photoelectrical Properties of Quercetin-Co(ii) Complex/N-Si Organic-Inorganic Hybrid Device

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