The effect of heat treatment on Au Schottky contacts on β-SiC

Ioannou, D.E.; Papanicolaou, N.; Nordquist, P. E. R.

doi:10.1109/t-ed.1987.23139

Cited by 59 publications

(22 citation statements)

References 6 publications

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“…Additionally, most of the metals interdiffuses into SiC within the temperature range of 450-500 8C leading to instability of Schottky barrier height [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Influence of surface cleaning effects on properties of Schottky diodes on 4H–SiC

Kwietniewski

Sochacki

Szmidt

et al. 2008

Applied Surface Science

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“…Additionally, most of the metals interdiffuses into SiC within the temperature range of 450-500 8C leading to instability of Schottky barrier height [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Influence of surface cleaning effects on properties of Schottky diodes on 4H–SiC

Kwietniewski

Sochacki

Szmidt

et al. 2008

Applied Surface Science

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“…The formation of silicides or carbides by several refractory metals (e.g., Co, Ni, Cr, Fe, Pt, Pd, and W), including the interdiffusion of other metals such as Pt and Au noted at temperatures as low as 450°C, is indicative of poor thermal stability, which could eventually lead to the degradation of the Schottky characteristics. [15][16][17][18] Oxides of Ir and Ru formed by annealing the metals in O 2 have been reported to improve the Schottky barrier heights and thermal stability of the contacts to n-type 4H-SiC. 10 The use of refractory metal borides could provide an alternative solution to the problem of interdiffusion and poor thermal stability for Schottky contacts to n-type SiC.…”

Section: Introductionmentioning

confidence: 99%

Improved Schottky Contacts on n-Type 4H-SiC Using ZrB2 Deposited at High Temperatures

Oder

Martin

Adedeji

et al. 2007

Journal of Elec Materi

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We report on improved electrical properties and thermal stability of ZrB 2 Schottky contacts deposited on n-type 4H-SiC at temperatures between 20°C and 800°C. The Schottky barrier heights (SBHs) determined by current-voltage measurements increased with deposition temperature, from 0.87 eV for contacts deposited at 20°C to 1.07 eV for those deposited at 600°C. The Rutherford backscattering spectroscopy (RBS) spectra of these contacts revealed a decrease in oxygen peak with an increase in the deposition temperature and showed no reaction at the ZrB 2 /SiC interface. These results indicate improved electrical and thermal properties of ZrB 2 /SiC Schottky contacts, making them attractive for high-temperature applications.

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“…It may be possible to determine some information about deep levels in the semiconductor from DLTS measurements on MOS capacitors [43]. DLTS measurements have been reported for pn-junction diodes in SiC [46] and Au to SiC Schottky diodes [47]. No previous reports have been made of DLTS for MOS capacitors on SiC.…”

Section: Deep-level Transient Spectroscopy (Dlts) Is a Technique To Dmentioning

confidence: 99%

“…After a cleaning procedure [47], 5000 A of Au was sputter deposited onto a SiC layer. Contact dots of 50, 75, and 250 Am were patterned onto the SiC.…”

Section: Deep-level Transient Spectroscopy (Dlts) Is a Technique To Dmentioning

confidence: 99%

MIS capacitor studies on silicon carbide single crystals:

Kopanski¹

1990

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In this continuation of previous work, cubic SiC metal-insulatorsemiconductor (MIS) capacitors with thermally grown or chemicalvapor-deposited (CVD) insulators were characterized by capacitance-voltage (C-V), conductance-voltage (G-V), and currentvoltage (I-V) measurements. The purpose of these measurements was to determine the four charge densities commonly present in an MIS capacitor (oxide fixed charge, Nr; interface trap level density, Dit ; oxide trapped charge, N ot ; and mobile ionic charge, Nm) and to determine the stability of the device properties with electricfield stress and temperature. It was found that an electricfield stress would alter the shape of the SiC MIS capacitor C-V characteristics. A negative voltage stress at room temperature would result in a negative shift of the C-V characteristics, indicating the creation of positive charge in the oxide. A positive voltage stress at room temperature resulted in no detectable shift of the C-V curve. The sense of these shifts in the C-V curves is the same as that observed for the "slow trapping" instability often observed in silicon and other semiconductor-based MIS capacitors. From the shift in the C-V characteristics at the mid-gap point, it was found that a negative voltage stress could increase Not by as much as 5 x 1011 CM-2 . A voltage stress was also found to increase D it by as much as 25%. The mobile ionic charge density was determined from a series of elevat_PA temperature bias stress measurements. N. for the capacitors in this study ranged from less than 1 x 10 11 to 4 x 10 11 cm -2 . It was found that increasing the temperature would also change the shape of the C-V characteristics, indicating an increase in the number of active interface traps_ The resistivity and breakdown field of various insulators on SiC were determined from the I-V characteristics of the capacitors. For capacitors with thermal oxide insulating layers, the average resistivity was about 10 56 O-cm, and the average electri,: breakdown field was 3.3 X 106 V/cm. Fowler-Nordheim tunneling was identified as the charge conduction mechanism of thermal oxide layers on cubic SiC. 7.1ne barrier height between n-type iiC and Si02 for the tunneling of electrons was determined to be 2.9 eV with an electron effective mass of 0.5 by fitting the Fowler-Nordheim formula to the observed I-V curve. Finally, some deep-level transient capacitance measurements were attempted on some of the SiC MIS capacitors and on Au on SiC Schottky diodes. In the conclusions of this report, a comprehensive summary of the electrical properties of cubic SiC MIS capacitors is presented.

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The effect of heat treatment on Au Schottky contacts on β-SiC

Cited by 59 publications

References 6 publications

Influence of surface cleaning effects on properties of Schottky diodes on 4H–SiC

Influence of surface cleaning effects on properties of Schottky diodes on 4H–SiC

Improved Schottky Contacts on n-Type 4H-SiC Using ZrB2 Deposited at High Temperatures

MIS capacitor studies on silicon carbide single crystals:

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