The effect of films thickness on structural and optical properties of amorphous Sn2O thin films deposited by ink jet printing method

Billur, Canan Alper; Şahin, Gizem Aytekin; Güneri, Emine; Saatçi, Buket; Soylu, Mehmet Çağrı

doi:10.1016/j.molstruc.2020.128577

Cited by 5 publications

(2 citation statements)

References 29 publications

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“…A proton beam with an energy of 170 keV was set up for vertical irradiation from the Au back electrode, as in the case of experimental irradiation. The measured thicknesses of all layers of the devices were used for the simulation, and the densities of all functional layers were taken from literature [32][33][34] as well as from the SRIM libraries. Figure 1d reveals that protons are strongly scattered in all layers of the device and stopped right before the glass substrate, which indicates ideal conditions for radiation damage testing, as recently outlined by Kirmani et al [24] The J-V characteristics of the photodiodes, measured in the dark are shown in Figure 2a.…”

Section: Resultsmentioning

confidence: 99%

Extreme Radiation Resistance of Self‐Powered High‐Performance Cs_0.04Rb_0.04(FA_0.65MA_0.35)_0.92Pb(I_0.85Br_0.14Cl_0.01)₃ Perovskite Photodiodes

Solovan

Mostovyi

Aidarkhanov

et al. 2023

Advanced Optical Materials

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In principle, they convert optical electromagnetic signals into electrical signals and reveal a linear dependence of the photocurrent on the light intensity.Currently, perovskite photodiodes based on various new synthesized materials have been developed, which in terms of responsivity and detectivity to incident light are close to commercially available photo diodes. [8][9][10][11] Radiation resistance of perovskite solar cells has attracted much attention recently and it was tested in a wide range of proton energies from 150 keV up to 68 MeV with accumulated fluences up to 10 14 protons cm −2 . [12][13][14][15][16] Interestingly the radiation resistance of hybrid perovskite materials vastly surpasses that of well-established elementary semiconductors Ge, Si, and even outperforms the relatively radiation resistant inorganic compound semiconductors such as GaAs and CdTe. [12,13,17,18] This indicates that optoelectronic and photovoltaic devices based on perovskite materials have huge potential for application in the space industry and radioactively contaminated terrestrial regions.So far, only Xiong et al. [19] reported on radiation hardness of perovskite photodiodes based on conventional low-stability methyl ammonium lead iodide CH 3 NH 3 PbI 3 perovskite active This work reports, for the first time, on radiation resistance of state-of-the-art multicomponent Cs 0.04 Rb 0.04 (FA 0.65 MA 0.35 ) 0.92 Pb(I 0.85 Br 0.14 Cl 0.01 ) 3 perovskite photodiodes, tested under high-intensity pulsed 170 keV proton irradiation with fluence up to 10 13 protons cm −2 . The studied photodiodes demonstrate record radiation resistance among reported analogous optoelectronic devices. Specifically, it is shown that the proton irradiation with the fluence of 2 × 10 12 protons cm −2 even leads to a slight improvement in the photodiode parameters. Nonetheless, a large fluence of 10 13 protons cm −2 deteriorates photodiode parameters on average by only 25% with respect to that of the as-prepared devices. The revealed high-performance and advanced radiation hardness demonstrate the huge application potential of lightweight and low-cost solution-processed perovskite optoelectronic devices in sensing and communication networks operating under harsh space conditions.

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Section: Resultsmentioning

confidence: 99%

Extreme Radiation Resistance of Self‐Powered High‐Performance Cs_0.04Rb_0.04(FA_0.65MA_0.35)_0.92Pb(I_0.85Br_0.14Cl_0.01)₃ Perovskite Photodiodes

Solovan

Mostovyi

Aidarkhanov

et al. 2023

Advanced Optical Materials

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“…The energy losses of 170 keV protons and the corresponding formation of vacancies in the functional layers of PSCs were estimated using the stopping and range of ions in matter (SRIM) simulations (see Figure 2d). The simulations utilized experimentally measured thicknesses of all functional layers and their densities, obtained from the literature [ 51,52 ] and SRIM libraries. A vertical proton beam with an energy of 170 keV was employed for irradiation, mimicking the experiment where irradiation was performed from the side of the gold anode.…”

Section: Resultsmentioning

confidence: 99%

Impact of a Short‐Pulse High‐Intense Proton Irradiation on High‐Performance Perovskite Solar Cells

Parkhomenko,

Solovan,

Sahare

et al. 2023

Adv Funct Materials

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This work investigates the radiation resistance of high‐performance multi‐component perovskite solar cells (PSCs) for the first time under extreme short‐pulse proton irradiation conditions. The devices are subjected to high‐intensity 170 keV pulsed (150 ns) proton irradiation, with a fluence of up to 1013 p cm−2, corresponding to ≈30 years of operation at low Earth orbit. A complex material characterization of the perovskite active layer and device physics analysis of the PSCs before and after short‐pulse proton irradiation is conducted. The obtained results indicate that the photovoltaic performance of the solar cells experiences a slight deterioration up to 20 % and 50 % following the low 2 × 1012 p cm−2 and high 1 × 1013 p cm−2 proton fluences, respectively, due to increased non‐radiative recombination losses. The findings reveal that multi‐component PSCs are immune even to extreme high‐intense short‐pulse proton irradiation, which exceeds harsh space conditions, including intense coronal ejection events usually associated with solar flares.

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Characterization of fully-evaporated perovskite solar cells and photodetectors under high-intensity pulsed proton irradiation

Parkhomenko,

Mostovyi,

Kaikanov

et al. 2024

Sci Rep

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This study investigates the impact of proton irradiation on perovskite devices fabricated fully through vacuum deposition. Exposure to irradiation induces changes in both electrical and optical properties. The analysis reveals that the main factors influencing the observed performance changes in solar cells are a significant reduction in shunt resistance and a minor increase in series resistance, with minimal alterations in recombination dynamics. Remarkably, the devices maintain promising photodetector characteristics both before and after proton irradiation, particularly in a self-powered mode without a reverse bias. These findings provide valuable insights into the resilience of vacuum-deposited perovskite devices against ionizing radiation, highlighting their potential for applications in radiation-prone environments, such as the nuclear industry or space exploration.

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The effect of films thickness on structural and optical properties of amorphous Sn2O thin films deposited by ink jet printing method

Cited by 5 publications

References 29 publications

Extreme Radiation Resistance of Self‐Powered High‐Performance Cs_0.04Rb_0.04(FA_0.65MA_0.35)_0.92Pb(I_0.85Br_0.14Cl_0.01)₃ Perovskite Photodiodes

Extreme Radiation Resistance of Self‐Powered High‐Performance Cs_0.04Rb_0.04(FA_0.65MA_0.35)_0.92Pb(I_0.85Br_0.14Cl_0.01)₃ Perovskite Photodiodes

Impact of a Short‐Pulse High‐Intense Proton Irradiation on High‐Performance Perovskite Solar Cells

Characterization of fully-evaporated perovskite solar cells and photodetectors under high-intensity pulsed proton irradiation

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The effect of films thickness on structural and optical properties of amorphous Sn2O thin films deposited by ink jet printing method

Cited by 5 publications

References 29 publications

Extreme Radiation Resistance of Self‐Powered High‐Performance Cs0.04Rb0.04(FA0.65MA0.35)0.92Pb(I0.85Br0.14Cl0.01)3 Perovskite Photodiodes

Extreme Radiation Resistance of Self‐Powered High‐Performance Cs0.04Rb0.04(FA0.65MA0.35)0.92Pb(I0.85Br0.14Cl0.01)3 Perovskite Photodiodes

Impact of a Short‐Pulse High‐Intense Proton Irradiation on High‐Performance Perovskite Solar Cells

Characterization of fully-evaporated perovskite solar cells and photodetectors under high-intensity pulsed proton irradiation

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Product

Resources

About

Extreme Radiation Resistance of Self‐Powered High‐Performance Cs_0.04Rb_0.04(FA_0.65MA_0.35)_0.92Pb(I_0.85Br_0.14Cl_0.01)₃ Perovskite Photodiodes

Extreme Radiation Resistance of Self‐Powered High‐Performance Cs_0.04Rb_0.04(FA_0.65MA_0.35)_0.92Pb(I_0.85Br_0.14Cl_0.01)₃ Perovskite Photodiodes