Extreme Radiation Resistance of Self‐Powered High‐Performance Cs_0.04Rb_0.04(FA_0.65MA_0.35)_0.92Pb(I_0.85Br_0.14Cl_0.01)₃ Perovskite Photodiodes

Abstract

In principle, they convert optical electromagnetic signals into electrical signals and reveal a linear dependence of the photocurrent on the light intensity.Currently, perovskite photodiodes based on various new synthesized materials have been developed, which in terms of responsivity and detectivity to incident light are close to commercially available photo diodes. [8][9][10][11] Radiation resistance of perovskite solar cells has attracted much attention recently and it was tested in a wide range of proton energies from 150 keV up to 68 MeV with accumulated fluences up to 10 14 protons cm −2 . [12][13][14][15][16] Interestingly the radiation resistance of hybrid perovskite materials vastly surpasses that of well-established elementary semiconductors Ge, Si, and even outperforms the relatively radiation resistant inorganic compound semiconductors such as GaAs and CdTe. [12,13,17,18] This indicates that optoelectronic and photovoltaic devices based on perovskite materials have huge potential for application in the space industry and radioactively contaminated terrestrial regions.So far, only Xiong et al. [19] reported on radiation hardness of perovskite photodiodes based on conventional low-stability methyl ammonium lead iodide CH 3 NH 3 PbI 3 perovskite active This work reports, for the first time, on radiation resistance of state-of-the-art multicomponent Cs 0.04 Rb 0.04 (FA 0.65 MA 0.35 ) 0.92 Pb(I 0.85 Br 0.14 Cl 0.01 ) 3 perovskite photodiodes, tested under high-intensity pulsed 170 keV proton irradiation with fluence up to 10 13 protons cm −2 . The studied photodiodes demonstrate record radiation resistance among reported analogous optoelectronic devices. Specifically, it is shown that the proton irradiation with the fluence of 2 × 10 12 protons cm −2 even leads to a slight improvement in the photodiode parameters. Nonetheless, a large fluence of 10 13 protons cm −2 deteriorates photodiode parameters on average by only 25% with respect to that of the as-prepared devices. The revealed high-performance and advanced radiation hardness demonstrate the huge application potential of lightweight and low-cost solution-processed perovskite optoelectronic devices in sensing and communication networks operating under harsh space conditions.

Self‐Healing of Proton‐Irradiated Organic Photodiodes and Photovoltaics

“…Another critical parameter is the detectivity, which indicates the sensitivity of the PD to weak optical signals. The detectivity limited by Johnson noise D th * , which stands for the maximum possible detectivity of a self‐powered PD, can be determined by the following equation: [ 57–59 ] $$$$\begin{equation}\ D_{th}^* = \frac{{{\mathrm{R}}\sqrt {\mathrm{A}} }}{{{i}_{{\mathrm{thermal}}}}}\ \end{equation}$$$$where A is the active area of the device and $${i}_{{\mathrm{thermal}}} = \sqrt {\frac{{4{k}_BT}}{{{R}_{sh}}}} \ $$. Here k B is Boltzmann constant, Т is absolute temperature, and R sh is shunt resistance, which was determined from the dark differential resistance at zero bias (see Figure S7 and Table S1, Supporting Information).…”

“…Another critical parameter is the detectivity, which indicates the sensitivity of the PD to weak optical signals. The detectivity limited by Johnson noise D th *, which stands for the maximum possible detectivity of a self-powered PD, can be determined by the following equation: [57][58][59]…”

“…Transfer matrix [71][72][73] simulations were performed to calculate the generation rates. The optical constants of all functional layers besides the active layer (Glass, ITO, ZnO, MoO x , and Ag) were taken from the literature, [58,71,[74][75][76] and their thicknesses were experimentally measured. The refraction index and excitation coefficient of the organic BHJ layer were determined from the experimentally measured transmission and reflection spectra before and after proton irradiation (see Figure S4, Supporting Information).…”

Electron Irradiation-Induced Degradation of TiN Thin Films on Quartz and Sapphire Substrates

“…The rapid technological advancement in the space industry has created key trends that open up new opportunities for more inclusive prosperity. It is well-known that most satellites and spacecraft operate within the Van Allen belts, which are radiation regions surrounding the Earth, containing high concentrations of energetic charged particles such as electrons and protons. , The radiation exposure from these charged particles in the belts can damage critical components of spacecraft and satellites, including their optoelectronic devices. ,− Consequently, due to the intensive development of the space industry and the effects of space radiation, there is a growing need for new radiation-resistant functional electronic and optoelectronic materials.…”

“…Presently, there are ongoing efforts to develop various radiation-resistant devices ,− and investigate the impact of ionizing radiation on material properties for practical applications in the space industry. ,,− Titanium nitride (TiN) stands out as a preferred and promising candidate for creating radiation-resistant optoelectronic devices in the space industry. ,,,, TiN boasts exceptional structural, thermal, chemical, electrical, optical, and mechanical properties, along with a wide band gap, making it successfully applicable in various fields of mechanical and electrical engineering. ,,, Accordingly, thin films of TiN can be used as conductive transparent layers in heterostructures, photodetectors, light-emitting diodes, and solar cells. ,− …”