2020
DOI: 10.1016/j.solener.2020.07.034
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The effect of dodecylammonium chloride on the film morphology, crystallinity, and performance of lead-free Bi-based solution-processed photovoltaics devices

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Cited by 19 publications
(27 citation statements)
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“…The direct or indirect band gap nature of the material can be predicted from the Tauc plot, that is, by plotting (α h υ) n versus the incident photon’s energy (eV); where “α” is the absorption coefficient, “ h ” is the Planck’s constant, and “υ” is the frequency of the incident photon. Additionally, the superscript is adjusted based on the nature of the band gap, that is, n = 2 is used for a direct band gap, while n = 1/2 is used for an indirect band gap semiconductor. , Since in our case, the prepared material is an indirect band gap semiconductor, we used n = 1/2 in the Tauc plot, as shown in Figure S10. The spectra show a negligible lower-energy absorption tail, indicating the material’s indirect band gap nature .…”
Section: Resultsmentioning
confidence: 99%
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“…The direct or indirect band gap nature of the material can be predicted from the Tauc plot, that is, by plotting (α h υ) n versus the incident photon’s energy (eV); where “α” is the absorption coefficient, “ h ” is the Planck’s constant, and “υ” is the frequency of the incident photon. Additionally, the superscript is adjusted based on the nature of the band gap, that is, n = 2 is used for a direct band gap, while n = 1/2 is used for an indirect band gap semiconductor. , Since in our case, the prepared material is an indirect band gap semiconductor, we used n = 1/2 in the Tauc plot, as shown in Figure S10. The spectra show a negligible lower-energy absorption tail, indicating the material’s indirect band gap nature .…”
Section: Resultsmentioning
confidence: 99%
“…Additionally, the superscript is adjusted based on the nature of the band gap, that is, n = 2 is used for a direct band gap, while n = 1/2 is used for an indirect band gap semiconductor. , Since in our case, the prepared material is an indirect band gap semiconductor, we used n = 1/2 in the Tauc plot, as shown in Figure S10. The spectra show a negligible lower-energy absorption tail, indicating the material’s indirect band gap nature . It has been observed in the spectra that the absorption edge for Sr 0.5 Pr 0.5 F 0.4 Ti 0.6 O 3−δ is around 440 nm.…”
Section: Resultsmentioning
confidence: 99%
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“…In contrast, Bi-based analogues demonstrate low toxicity and remarkable stability in air, making them promising candidates for Pb-based alternatives. , To date, various Bi-based materials have been reported, including FA 3 Bi 2 I 9 (FA: formamidinium), MA 3 Bi 2 I 9 (MA: methylammonium), Cs 3 Bi 2 I 9 , and CsBi 3 I 10 . Among them, all-inorganic CsBi 3 I 10 has emerged as one of the most promising photovoltaic materials owing to its good chemical stability, appropriate band gap (1.78 eV), and strong visible light absorption.…”
Section: Introductionmentioning
confidence: 99%
“…Advancement in compositional engineering and other novel strategies (other than the prevailing ones) is desired to control the rapid crystallization in HPVKs and fabricate high‐quality perovskite films with minimized energy losses in PV devices. [ 146 ] Furthermore, novel strategies are necessary to fabricate HPVK thin films with larger grain size to reduce grain boundaries and promote steady charge transportation in PV devices.…”
Section: Outlook and Future Perspectivesmentioning
confidence: 99%