The effect of AlN buffer layer on GaN grown on (111)-oriented Si substrates by MOCVD

Zamir, S.; Meyler, B.; Zolotoyabko, E.; Salzman, J.

doi:10.1016/s0022-0248(00)00570-4

Cited by 61 publications

(35 citation statements)

References 17 publications

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“…The influence of the growth temperature of AlN seed layers on the structural quality of the subsequently grown GaN was first reported by Watanabe and co-workers [62] and more recently by Lahrèche and co-workers [33] and Zamir and co-workers [78]. Watanabe In contrast to these findings are our results.…”

Section: Seed Layercontrasting

confidence: 79%

Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon

Dadgar

Strittmatter

Bläsing

et al. 2003

phys. stat. sol. (c)

126

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GaN growth on Si is very attractive for low-cost optoelectronics and high-frequency, high-power electronics. It also opens a route towards an integration with Si electronics. Early attempts to grow GaN on Si suffered from large lattice and thermal mismatch and the strong chemical reactivity of Ga and Si at elevated temperatures. The latter problem can be easily solved using gallium-free seed layers as nitrided AlAs and AlN. The key problem for device structure growth on Si is the thermal mismatch leading to cracks for layer thicknesses above 1 µm. Meanwhile, several concepts for strain engineering exist as patterning, Al(Ga)N/GaN superlattices, and low-temperature (LT) AlN interlayers which enable the growth of device-relevant GaN thicknesses. The high dislocation density in the heteropitaxial films can be reduced by several methods which are based on lateral epitaxial overgrowth using ex-situ masking or patterning and by in-situ methods as masking with monolayer thick SiN. With the latter method in combination with strain engineering by LT-AlN interlayers dislocation densities around 109 cm -2 can be achieved for 2.5 µm thick device structures.

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Section: Seed Layercontrasting

confidence: 79%

Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon

Dadgar

Strittmatter

Bläsing

et al. 2003

phys. stat. sol. (c)

126

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“…2 It was recognized early on that the quality of GaN layers grown on these AlN buffers are dependent upon the buffer layer deposition parameters, primarily growth temperature (900-1200C) and thickness (10-500 nm). [2][3][4][5][6][7][8] However, the presence of an oxide free and smooth Si surface favouring epitaxy also plays a major role in determining the quality of AlN buffers deposited and hence on the subsequent AlGaN-GaN epilayers. Ex-situ treatment, using HF/buffered HF, is used either as a stand-alone pre-treatment 6,9,10 or in conjunction with an in-situ thermal desorption step in a hydrogen ambient 2,3,11,12 for native oxide removal from Si.…”

mentioning

confidence: 99%

An early in-situ stress signature of the AlN-Si pre-growth interface for successful integration of nitrides with (111) Si

Chandrasekar

Mohan

Bardhan

et al. 2013

Applied Physics Letters

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The integration of MOCVD grown group III-A nitride device stacks on Si (111) substrates is critically dependent on the quality of the first AlN buffer layer grown. A Si surface that is both oxide-free and smooth is a primary requirement for nucleating such layers. A single parameter, the AlN layer growth stress, is shown to be an early (within 50 nm), clear (<0.5 GPa versus >1 GPa) and fail-safe indicator of the pre-growth surface, and the AlN quality required for successful epitaxy. Grain coalescence model for stress generation is used to correlate growth stress, the AlN-Si interface and crystal quality.

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“…Zamir et al [11] systemically studied the effect of the AlN buffer layer's growth temperature on the structural quality of GaN layers grown on the top of AlN-on-Si. They used the March parameter as a figure of merit in X-ray diffraction (XRD) testing of textured GaN films.…”

Section: Introductionmentioning

confidence: 99%