The dielectric properties of yttria-stabilized zirconia

Lanagan, Michael T.; Yamamoto, Joyce K.; Bhalla, A. S.; Sankar, S. G.

doi:10.1016/0167-577x(89)90047-5

Cited by 77 publications

(34 citation statements)

References 10 publications

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“…At room temperature, the value of *26 falls within the range of published data for YSZ of comparable composition (23-39) [23][24][25][26][27][28]. From room temperature to 200°C, the values obtained are similarly in good agreement with data for YSZ single crystals of slightly higher yttria content (14 mol%) [29]. The marked increase in dielectric constant between 150 and 250°C is most likely associated with the onset of dipolar relaxation.…”

Section: Resultssupporting

confidence: 79%

Local electrical and dielectric properties of nanocrystalline yttria-stabilized zirconia

2008

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Grain core and grain boundary electrical and dielectric properties of nanocrystalline yttria-stabilized zirconia (YSZ) were analyzed using a novel nano-Grain Composite Model (n-GCM). Partially sintered pellets with average grain sizes ranging from 10 to 73 nm were analyzed over a range of temperatures using AC impedance spectroscopy (AC-IS). Local grain core and grain boundary conductivities, grain boundary dielectric constants, and effective grain boundary space charge widths were determined from the fitted circuit parameters. Required grain core dielectric constant data were provided by AC-IS measurements of single crystal YSZ over a range of temperatures. The local grain core conductivity of all the nanocrystalline samples was slightly decreased with respect to that of microcrystalline YSZ. Conversely, the local grain boundary conductivity was enhanced up to an order of magnitude compared to microcrystalline YSZ. At the nanoscale, there was a noticeable increase in local grain boundary dielectric constant versus single crystal values at the same temperature.

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Section: Resultssupporting

confidence: 79%

Local electrical and dielectric properties of nanocrystalline yttria-stabilized zirconia

2008

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“…The increased ox should be associated with the phase transformation from monoclinic to tetragonal, since it is known that the latter phase has larger permittivity than that of the former phase in bulk form. [22][23][24] Further increase in the silicon content results in the reduction of ox value. At the silicon content of 16 atom %, the average ox value is 21.7, being slightly smaller than that of pure zirconium.…”

Section: Journal Of the Electrochemical Society 157 ͑12͒ C444-c451 ͑mentioning

confidence: 99%

“…9,15 In these studies, large enhancement of the capacitance and permittivity of the anodic oxide films by incorporation of titanium species has been found. The formation of a high-temperature stable phase of cubic or tetragonal ZrO 2 , which possesses higher permittivity compared with monoclinic ZrO 2 , [22][23][24] attributed to the capacitance enhancement.Recently, the authors have examined the growth, structure and dielectric properties of anodic oxide films on Zr-16 atom % Si alloy. 25 The alloy forms the anodic oxide films with enhanced capacitance, compared with those on zirconium.…”

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confidence: 99%

Phase Transformation and Capacitance Enhancement of Anodic ZrO[sub 2]–SiO[sub 2]

Koyama¹,

Aoki²,

Sakaguchi

et al. 2010

J. Electrochem. Soc.

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Capacitance enhancement of anodic oxide films on zirconium by adding silicon is reported here with correlation to the phase transformation of the oxide. The anodic oxide film formed on zirconium consists mainly of monoclinic ZrO 2 , which changes to tetragonal ZrO 2 phase on the Zr-5.5 atom % Si. Further increase in the silicon contents to 10 and 16 atom % results in the formation of amorphous oxide up to 30 V, above which two-layered films, comprising an outer crystalline tetragonal-phase oxide layer and an inner amorphous layer, are developed. The relative thickness of the outer crystalline layer to the total film thickness increases with formation voltage. The highest capacitance of the anodic oxide films is obtained on the Zr-10 atom % Si. The changes in capacitance, permittivity and formation ratio of anodic oxide films with alloy composition are discussed with phase transformation and growth process of anodic oxides. © 2010 The Electrochemical Society. ͓DOI: 10.1149/1.3503592͔ All rights reserved.Manuscript submitted August 9, 2010; revised manuscript received September 23, 2010. Published October 22, 2010 ZrO 2 is an important inorganic material for high-temperature applications, due to many useful properties such as high strength and stability at high temperatures, oxide ion conductivity at elevated temperatures and radiation-resistant properties. These features make ZrO 2 attractive for oxygen sensors, solid oxide fuel cells, and nuclear materials. Moreover, in recent years, zirconia-based materials, including ZrO 2 -SiO 2 , have been proposed as a promising high-gate dielectric material for metal-oxide-semiconductor ͑MOS͒ transistors. 8,9 Anodizing is the most simple and easiest method to form dielectric oxides, and this has been extensively used to form dielectric oxide films on aluminum and tantalum for electrolytic capacitor applications. Tantalum electrolytic capacitors are widely used in electronics industry, but due to limitation of natural resources of tantalum and for high demand of increasing capacitance, alternative abundant materials that form oxides with higher permittivity, such as niobium and titanium, have been studied. [10][11][12][13][14][15][16] Zirconium forms usually crystalline anodic oxide films, in contrast to the formation of amorphous anodic oxides on a range of valve metals, including aluminum, bismuth, niobium, tantalum and tungsten. 17 The crystalline structure of anodic zirconium oxide films is influenced by surface treatments prior to anodizing and electrolyte for anodizing. When magnetron-sputtered zirconium is anodized in ammonium pentaborate electrolyte without pretreatment of the deposited surface, crystalline oxide films, consisting mainly of monoclinic ZrO 2 , are developed. 9 The monoclinic phase of ZrO 2 is thermodynamically the most stable at ambient temperature, but amorphous and high-temperature stable phases of cubic or tetragonal ZrO 2 are also often found in the anodic oxide films formed on chemically polished zirconium, particularly at low formation voltage...

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“…10, an about 4.5-nm-thick silicon oxide layer was formed between the 10-nm-thick YSZ layer and the Si substrate. Assuming that the relative dielectric constant of the YSZ layer is 27 17,28) and that the transition layer is silicon dioxide (SiO 2 ) with a relative dielectric constant of 3.9, the accumulation capacitance of the YSZ/SiO 2 /Si structure per unit area is calculated to be about 580 nF/cm 2 . Since this calculated accumulation capacitance is almost equal to the experimental one of about 530 nF/cm 2 (Fig.…”

Section: Resultsmentioning

confidence: 99%

Low Temperature Heteroepitaxial Growth of a New Phase Lead Zirconate Titanate Film on Si Substrate with an Epitaxial (ZrO₂)_1-x(Y₂O₃)_xBuffer Layer

Horita¹,

Aikawa²,

Naruse³

2000

Jpn. J. Appl. Phys.

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We investigated the crystalline and electrical properties of heteroepitaxial lead zirconate titanate (PZT) films grown on Si covered with epitaxial (100) (ZrO 2 ) 1−x (Y 2 O 3 ) x (YSZ) buffer layers. The PZT films were prepared by reactive sputtering. When the substrate temperature was between 400 and 485 • C, we obtained a heteroepitaxial (110) oriented monoclinic PZT (m-PZT) film which was metastable. The lattice parameters were as follows: a = b = 0.379 nm, c = 0.521 nm and γ = 81.3 • . The m-PZT film had a larger oxygen composition ratio O/(Zr + Ti) of 3.2 to 3.8 than the perovskite phase. Although the resistivity of the as-grown m-PZT film was much lower than that of the normal perovskite phase, it was increased by two to five orders of magnitude by a step-annealing process of 300 • C for 120 min, 325 • C for 120 min and 350 • C for 180 min in sequence. From the C-V characteristics of the step-annealed m-PZT/YSZ/Si structure, the relative dielectric constant was estimated to be about 45.

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The dielectric properties of yttria-stabilized zirconia

Cited by 77 publications

References 10 publications

Local electrical and dielectric properties of nanocrystalline yttria-stabilized zirconia

Local electrical and dielectric properties of nanocrystalline yttria-stabilized zirconia

Phase Transformation and Capacitance Enhancement of Anodic ZrO[sub 2]–SiO[sub 2]

Low Temperature Heteroepitaxial Growth of a New Phase Lead Zirconate Titanate Film on Si Substrate with an Epitaxial (ZrO₂)_1-x(Y₂O₃)_xBuffer Layer

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The dielectric properties of yttria-stabilized zirconia

Cited by 77 publications

References 10 publications

Local electrical and dielectric properties of nanocrystalline yttria-stabilized zirconia

Local electrical and dielectric properties of nanocrystalline yttria-stabilized zirconia

Phase Transformation and Capacitance Enhancement of Anodic ZrO[sub 2]–SiO[sub 2]

Low Temperature Heteroepitaxial Growth of a New Phase Lead Zirconate Titanate Film on Si Substrate with an Epitaxial (ZrO2)1-x(Y2O3)xBuffer Layer

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Low Temperature Heteroepitaxial Growth of a New Phase Lead Zirconate Titanate Film on Si Substrate with an Epitaxial (ZrO₂)_1-x(Y₂O₃)_xBuffer Layer