2008
DOI: 10.1007/s10853-008-2553-x
|View full text |Cite
|
Sign up to set email alerts
|

Local electrical and dielectric properties of nanocrystalline yttria-stabilized zirconia

Abstract: Grain core and grain boundary electrical and dielectric properties of nanocrystalline yttria-stabilized zirconia (YSZ) were analyzed using a novel nano-Grain Composite Model (n-GCM). Partially sintered pellets with average grain sizes ranging from 10 to 73 nm were analyzed over a range of temperatures using AC impedance spectroscopy (AC-IS). Local grain core and grain boundary conductivities, grain boundary dielectric constants, and effective grain boundary space charge widths were determined from the fitted c… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

4
42
0

Year Published

2009
2009
2019
2019

Publication Types

Select...
9
1

Relationship

0
10

Authors

Journals

citations
Cited by 56 publications
(46 citation statements)
references
References 36 publications
4
42
0
Order By: Relevance
“…Dielectric constants of YSZ and Al 2 O 3 were obtained from Ref. [26,27]. Dielectric constant of YSZ grain boundary is the same as its bulk value since the dielectric constant of ZrO 2 is insensitive to its composition [28].…”
Section: Effect Of Ysz/al 2 O 3 Interfacementioning
confidence: 99%
“…Dielectric constants of YSZ and Al 2 O 3 were obtained from Ref. [26,27]. Dielectric constant of YSZ grain boundary is the same as its bulk value since the dielectric constant of ZrO 2 is insensitive to its composition [28].…”
Section: Effect Of Ysz/al 2 O 3 Interfacementioning
confidence: 99%
“…[1][2][3][4] Nano-structured cubic YSZ, however, shows an anomalously high conductivity at room temperature if exposed to a wet atmosphere. This has been attributed to proton conduction.…”
Section: Introductionmentioning
confidence: 99%
“…e d of YDZ as a function of temperature was obtained from the literature. 21 / B is the barrier height of the trap state to which, it is assumed carriers, have been promoted into. We have used the shallowest traps reported in the literature, 1.4 </ B < 3.2 eV below the conduction band, 14 for YDZ to obtain the highest current possible, thereby giving an upper bound for power loss.…”
Section: B Physical Considerationsmentioning
confidence: 99%