The development of titanium silicide–boron-doped polysilicon resistive temperature sensors

Abstract

Thin films of titanium silicide (TiSi 2 ) formed on heavily boron-doped polycrystalline silicon (poly-Si/B + ) were applied for the first time for resistive temperature sensing. The temperature sensors exhibited a high-temperature coefficient of resistance of 3.8 × 10 −3 • C −1 , a linear dependence of resistance on temperature and an excellent thermal and electrical stability up to 800 • C. This work discusses the fabrication method and the morphological and electrical characterization of the TiSi 2 /poly-Si thin film resistors throughout the stages of its formation.

Characterization and modeling of CMOS-compatible acoustical particle velocity sensors for applications requiring low supply voltages

“…Titanium silicide polysilicon has a relatively high temperature coefficient [21], which, in the process used in this work, was about 3×10 -3 K -1 ; the second order coefficient, indicated with  in Eq. (1), was of the order of 8×10 -7 K -2 .…”

Low-power silicon-based thermal sensors and actuators for chemical applications

“…Both the metal thin films as well as the metal dispersed sol-gel based γ-alumina layers were characterized and showed good catalytic activity (for the results of CO chemisorption see Table 7.1). Future work will combine these catalyst micropatterns with MEMS-based microcalorimeters to develop catalytic gas sensors [71], [72].…”

“…However, in practice, the substrate has a larger thermal mass than used in our geometry. This design corresponds to micro hotplates we have studied previously [71], [72]. The mesh used in the numerical model was determined by the dimensions of the thin isolating membrane as it is the thinnest layer in the system.…”

“…The TiSi 2 on poly-Si/B+ thin film was used for the control and measurement of temperature due to the high and stable TCR of 3.8 × 10 −3 / • C up to 800 • C. This temperature range is required to study thermally activated catalytic oxidation of hydrocarbons. The silicidation procedure is discussed in detail in [72]. The resistance value for the TiSi 2 /Poly-Si temperature sensor with respect to thickness of the TiSi 2 was investigated.…”

“…The sensor was mounted on the custom-made printed circuit board and wire-bonded with 25 µm thick Al/Si (99/1%) wire. For more detailed description of the fabrication procedure see [72], [71].…”