The detailed analysis of auger effect on the efficiency of intermediate band solar cells

Navruz, Tuğba Selcen; Saritaş, Müzeyyen

doi:10.1016/j.solmat.2009.06.024

Cited by 12 publications

(5 citation statements)

References 22 publications

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“…The feature that U abs increases while J abs decreases, and the resultant improvement in η are in common with those of the IB‐assisted HC‐SCs in which hot carriers are extracted from an absorber equipped with an IB . The η values are also comparable with those of IB‐SCs including carrier multiplication that is another means to utilize hot‐carrier energies …”

Section: Resultsmentioning

confidence: 65%

Intermediate‐band effect in hot‐carrier solar cells

Takeda

2019

Progress in Photovoltaics

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I have proposed that two-step photoexcitation of carriers is feasible in hot-carrier solar cells (HC-SCs), like that in intermediate-band solar cells (IB-SCs). The second excitation from the IB to the conduction band (CB) in an IB-SC is regarded to make the carriers in the unoccupied band hot. In an analogous way, in an HC-SC, a photoexcited carrier arising from the interband transition can be further excited by the next photon via the intraband transition. In other words, the lower-energy states in the CB function as the IB. Owing to this IB effect, the absorbed energy increases while the excited carrier number decreases under the optimal operating conditions; the latter leads to a decrease in the energy dissipation associated with the hot-carrier extraction. Consequently, the limiting conversion efficiency of the HC-SCs improves by up to 6% to 9% (absolute) compared with that with no IB effect, under the condition of the carrier thermalization time of 1 ns and 1000 times concentrated solar illumination. The detrimental impact of the increase in the emitted energy due to the intraband transition is well suppressed under the suitable operating conditions. Thus, the IB effect always provides positive results even if the effect is weak, contrasting to that the weak second excitation could lower the conversion efficiency of an IB-SC.

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Section: Resultsmentioning

confidence: 65%

Intermediate‐band effect in hot‐carrier solar cells

Takeda

2019

Progress in Photovoltaics

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“…As a result, the question of the direct observation of interatomic Auger transitions in the X-ray energy range remains open. Since our experiments were performed on photovoltaic materials, we noticed that Auger processes play an important role in photoelectric converters since they determine energy losses and limit the efficiency of their operation [12] , of course in the optical and not in the X-ray range, which will be considered in this article.…”

Section: Introductionmentioning

confidence: 99%

Resonant Interatomic Auger Transition in Chalcopyrite CuInSe2

Гребенников

Кузнецова

2019

Physica Status Solidi (a)

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The interatomic Auger transitions in compounds containing atomic components with core levels close in energy are studied theoretically and experimentally. The Coulomb transitions of a hole between such levels lead to a resonant enhancement of the Auger spectra (with respect to the energy difference between the levels). Interatomic Auger transitions involving high lying levels are formed by shaking up electrons due to the dynamic field of photo holes produced during the transition. These effects are observed experimentally in XPS and Auger spectra of CuInSe2 type materials.

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“…16 In this paper, we employ the drift-diffusion model to investigate the effects of InAs/GaAs QDs on current-voltage characteristic in IBSCs by changing n-type doping density in the QD layer. The main difference between this modeling and previous work done on IBSCs, is that previously the current-voltage characteristics are mostly based on the detailed balanced method, 1,3,17,18 material parameters such as the absorption coefficients, carrier mobilities, etc. are not involved.…”

Section: Introductionmentioning

confidence: 99%

Theoretical study of the effects of n-type doping in InAs/GaAs quantum dot layer on current–voltage characteristics of intermediate band solar cells

Gu¹,

Xu²

2018

Jpn. J. Appl. Phys.

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We investigated the current-voltage characteristic of InAs/GaAs quantum dot intermediate band solar cells (QD IBSCs) with different n-type doping density in the QD layer. The n-type doping evidently increases the open circuit voltage, meanwhile decreases the short circuit current density, and leads to the conversion efficiency approaching that of the control solar cell, that is the major role of n-type doping is to suppress the effects of QDs on the current-voltage characteristic. Our model adopts practical parameters for simulation rather than those from detailed balanced method, so that the results in our simulation are not overestimated.

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The detailed analysis of auger effect on the efficiency of intermediate band solar cells

Cited by 12 publications

References 22 publications

Intermediate‐band effect in hot‐carrier solar cells

Intermediate‐band effect in hot‐carrier solar cells

Resonant Interatomic Auger Transition in Chalcopyrite CuInSe2

Theoretical study of the effects of n-type doping in InAs/GaAs quantum dot layer on current–voltage characteristics of intermediate band solar cells

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