Diffusion lengths of minority carriers in the range 50–1200 μm were measured in n- and p-type silicon single crystals with a wide range of resistivities by the surface photovoltage (SPV) and photoconductive decay (PCD) methods. Previously published values for the optical absorption coefficient of Si differed sufficiently to result in a substantial uncertainty in the minority-carrier diffusion length determined by the SPV method. In order to minimize the uncertainty in diffusion length values obtained by the SPV method, the optical absorption coefficient of Si was measured in the wavelength interval 0.8≤λ≤1.16 μm [M. Saritas and H. D. McKell, J. Appl. Phys. 61, 4923 (1987)]. When our absorption coefficient data were used, the diffusion lengths measured by the SPV and PCD methods were found to be in agreement.
The absorption coefficient, α as a function of wavelength in the region of 0.80–1.16 μm was determined by the transmission technique. The present α data fit an indirect transition model of L. H. Hall, J. Barden, and F. J. Blatt [Phys. Rev. 99, 559 (1954)]. The α data of W. C. Dash and R. Newman [Phys. Rev. 99, 1155 (1955)] and W. R. Runyan [Southern Methodist University Report SMU 83-13 (1967)] did not fit the indirect transition model. The reflectivity values obtained from transmission data at long wavelengths are less than those of H. R. Philipp and E. A. Taft [Phys. Rev. 120, 37 (1960)] and W. C. Dash and R. Newman. The present surface preparation technique produced a reflection loss slightly lower than would be expected from the surface characteristic of bulk material.
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