Efficiency variation of the intermediate band solar cell due to the overlap between absorption coefficients

Navruz, Tuğba Selcen; Saritaş, Müzeyyen

doi:10.1016/j.solmat.2007.08.012

Cited by 39 publications

(66 citation statements)

References 8 publications

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“…2 In order to realize IBSCs, multistacked quantum dots ͑QDs͒ or a three-dimensional QD superlattice, 3-6 an impurity-band, 7 and a band anticrossing in a mismatched alloy semiconductor 8 have been proposed. The detailed balance model 1,9-11 and drift-diffusion method with an analytical expansion of the Poisson equation or current continuity equations [12][13][14][15] have been used to theoretically investigate the optimal combination of IB states and energy band gap of host material, operation under concentration, and effect of overlapping spectra of absorption coefficients. However, the detailed balance approach does not incorporate any physical information of device structure and the latter is not a selfconsistent treatment.…”

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confidence: 99%

Self-consistent simulation of intermediate band solar cells: Effect of occupation rates on device characteristics

Yoshida

Okada

Sano

2010

Applied Physics Letters

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In order to design optimum structures for intermediate band solar cells, simulations based on self-consistent drift-diffusion model with a suitable treatment of the intermediate band in device domain are necessary. In this work, we have included the dependence of occupation rate of intermediate band at each position on optical generation rate via the intermediate band. Typical material parameters of GaAs were used except for the absorption coefficient of each corresponding band-to-band transition. Simulation results using our model indicate that the dependence of occupation rate on device position strongly affect short-circuit currents and also electrostatic potentials of the cell.

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confidence: 99%

Self-consistent simulation of intermediate band solar cells: Effect of occupation rates on device characteristics

Yoshida

Okada

Sano

2010

Applied Physics Letters

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“…For conventional IB-SCs, when photon selectivity is being broken, carrier energies in excess of the bandgap are increased and consequently conversion efficiency is lowered, as stated in the Sect. 8.1 [10,11]. By extracting hot carriers, the increased excess carrier energy is not an issue.…”

Section: Intermediate-band-assisted Hc-scsmentioning

confidence: 99%

“…However, IB-SCs involve various issues. Especially, "photon selectivity" that the spectral absorption ranges for the three interband transitions have no overlap with each other is needed to minimize the excess carrier energies and to achieve high conversion efficiency close to those of 3J-SCs [10,11] but seems difficult to realize.…”

Section: Introductionmentioning

confidence: 99%

Requisites for Highly Efficient Hot-Carrier Solar Cells

Takeda

2013

Lecture Notes in Nanoscale Science and Technology

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We have constructed new models based on detailed balance of particle and energy fluxes to clarify the operating principle of hot-carrier solar cells (HC-SCs) and find the requisites for high conversion efficiency. Energy dissipation due to thermalization of photogenerated carriers can be significantly reduced, even though the thermalization time is not sufficiently long. Instead, the energy dissipation related to entropy generation associated with hot-carrier extraction is remarkable. The thermalization time must be several nanoseconds to exceed the Shockley-Queisser limit under the 1 sun solar irradiation and over 10 ns to compete against triple-junction solar cells at 1,000 sun. The other requisites unique to hot-carrier extraction are a short carrier equilibration time being around one-thousandth of the thermalization time, and an energy-selection width of energy-selective contacts (ESCs) for mono-energetic carrier extraction, which is needed to match the quasi-Fermi levels in the hot absorber and in the cold electrodes, being narrower than 0.1 eV. It seems extremely challenging to fulfill all the requisites, although investigations for material development as well as new concepts for post conventional HC-SCs are underway. IntroductionIn a conventional solar cell, a photon whose energy is higher than the bandgap of the light-absorbing material used in the cell is absorbed to generate a carrier with an energy equal to the photon energy. However, carrier energies in excess of the bandgap of the absorber immediately dissipate by emitting phonons whose temperature equals the room temperature, namely, thermalization of carriers occurs within several picoseconds in most cases. Therefore, the excess carrier energies cannot be

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“…These coefficients dictate the probability of a photon being absorbed or emitted for each of the generation and radiative recombination processes in the detailed balance theory [10]. The shapes, values of those coefficients dependent to the frequency play the important role in the IBSC limitting efficiency which are being studied in several papers [8,9,11,12]. For instance, one important hypothesis behind the ideal model of IBSC proposed by Luque and Marti [1] is to design a QDs array structure with a single metallic-like IB located in the optimal position inside the forbidden gap with a finite bandwidth.…”

Section: Introductionmentioning

confidence: 99%

Proposal of simplified model for absorption coefficients in quantum dot array based intermediate band solar cell structure

Mehdipour

Sasaoka

Ogawa

et al. 2014

IEICE Electron. Express

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We propose a simplified theoretical model to analyze the absorption coefficients in quantum dot intermediate band solar cell (QD-IBSC) structure. Our theoretical model, based on the multiband tight-binding Hamiltonian including the conduction, valence, and the intermediate band, can capture some essential features in the actual QD-IBSC such as the absorption path dependence of the absorption strength and the line shape of the absorption spectrum in spite of its simplicity. The main feature of this model is its ability to be applied to any QD-IBSC system regardless of the geometrical parameters (QDs shapes and spacing) or the base materials by changing the relevant coupling parameters. The proposed simplified should be of useful for the semi-quantitative understanding and modeling of QD-IBSC.

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Efficiency variation of the intermediate band solar cell due to the overlap between absorption coefficients

Cited by 39 publications

References 8 publications

Self-consistent simulation of intermediate band solar cells: Effect of occupation rates on device characteristics

Self-consistent simulation of intermediate band solar cells: Effect of occupation rates on device characteristics

Requisites for Highly Efficient Hot-Carrier Solar Cells

Proposal of simplified model for absorption coefficients in quantum dot array based intermediate band solar cell structure

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