The design and performance of beamline BL16XU at SPring-8

Hirai, Yasuharu; Yasuami, S.; Kobayashi, Akira; Hirai, You; Nishino, Junichi; Shibata, Masahiro; Yamaguchi, Koji; Liu, Kuang-Yu; Kawado, Seiji; Yamamoto, Tohru; Noguchi, Shin’ichi; Takahashi, Mamoru; Konomi, Ichiro; Kimura, Shigeru; Hasegawa, Masaki; Awaji, N.; Komiya, Satoshi; Hirose, Takayuki; Ozaki, Shinji; Okajima, Toshihiro; Ishikawa, Tetsuya; Kitamura, Hideo

doi:10.1016/j.nima.2003.10.107

Cited by 27 publications

(13 citation statements)

References 16 publications

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“…The Mg K peak was separated from the adjacent Ga L 3,4 peak, which was achieved by the high energy resolution of the detector. In this regard, the Mg K peak was not separated from the Ga peak by a conventional SDD (detector: SiriusSD A30133LE-ISF-V, RaySpec Ltd) at the bending magnet beamline BL1N2 of the Aichi Synchrotron Radiation Center, Japan (Takeda, 2016), and was not detected even by WDX (analyzing crystal: thallium acid phthalate; detector: a gas-flow-type proportional counter, Rigaku Co.) at the undulator beamline BL16XU of the Super Photon Ring 8 GeV (SPring-8), Japan (Hirai et al, 2004) (both data sets are not shown). The experimental Mg K-edge XANES spectrum is shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Local atomic structure analysis around Mg atom doped in GaN by X-ray absorption spectroscopy and spectrum simulations

Isomura

Kimoto

2021

J Synchrotron Radiat

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The identification of the incorporated site of magnesium (Mg) and hydrogen (H) required for p-type formation in gallium nitride (GaN) power devices has been demonstrated by X-ray absorption spectroscopy (XAS). In this study, the fluorescence line of Mg with 3 × 1019 atoms cm−3 was successfully separated from that of Ga using a superconducting tunnel junction array detector with high sensitivity and high energy resolution, and consequently the Mg K-edge XAS spectra of such dilute samples were obtained. The site of Mg atoms incorporated into the GaN lattice was identified as the Ga substitutional site by comparing the experimental XAS spectrum with the simulated spectra calculated by density functional theory. In addition, the presence or absence of H around Mg can be determined through distinctive characteristics expected from the spectrum simulations.

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Section: Resultsmentioning

confidence: 99%

Local atomic structure analysis around Mg atom doped in GaN by X-ray absorption spectroscopy and spectrum simulations

Isomura

Kimoto

2021

J Synchrotron Radiat

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“…For the oxidized Cu, XAS measurements were conducted at the BL16XU and BL16B2 beamlines in the synchrotron radiation facility SPring-8 in Japan, which has an electron storage ring with a circumference of 1436 m and is operated at an electron energy of 8 GeV with a current of 100 mA (Hirai et al, 2004). At BL16XU, quasi-monochromatic light from an undulator was monochromated with a Si(111) double-crystal monochromator.…”

Section: Methodsmentioning

confidence: 99%

A practical method for determining film thickness using X-ray absorption spectroscopy in total electron yield mode

Isomura

Oh-ishi

Takahashi

et al. 2021

J Synchrotron Radiat

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Thin films formed on surfaces have a large impact on the properties of materials and devices. In this study, a method is proposed using X-ray absorption spectroscopy to derive the film thickness of a thin film formed on a substrate using the spectral separation and logarithmic equation, which is a modified version of the formula used in electron spectroscopy. In the equation, the decay length in X-ray absorption spectroscopy is longer than in electron spectroscopy due to a cascade of inelastic scattering of electrons generated in a solid. The modification factor, representing a multiple of the decay length, was experimentally determined using oxidized Si and Cu with films of thickness 19 nm and 39 nm, respectively. The validity of the proposed method was verified, and the results indicated that the method can be used in the analysis of various materials with thin films.

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“…4,15 The x-ray was focused with a rhodium-coated toroidal mirror. The beam size of the x-ray was 100 Â 10 lm 2 .…”

Section: Methodsmentioning

confidence: 99%

Mass densification and defect restoration in chemical vapor deposition silicon dioxide film using Ar plasma excited by microwave

Kawase¹,

Motoya²,

Uehara³

et al. 2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The design and performance of beamline BL16XU at SPring-8

Cited by 27 publications

References 16 publications

Local atomic structure analysis around Mg atom doped in GaN by X-ray absorption spectroscopy and spectrum simulations

Local atomic structure analysis around Mg atom doped in GaN by X-ray absorption spectroscopy and spectrum simulations

A practical method for determining film thickness using X-ray absorption spectroscopy in total electron yield mode

Mass densification and defect restoration in chemical vapor deposition silicon dioxide film using Ar plasma excited by microwave

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