Mass densification and defect restoration in chemical vapor deposition silicon dioxide film using Ar plasma excited by microwave

Abstract

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Hybrid simulation of a capacitive Ar/SiH4 discharge driven by electrically asymmetric voltage waveforms

“…For example, at 500 mTorr, the Ar + ion content in the SAE case is approximately 18.3%, and that in the AAE case is around 23.4%. In the silane-argon mixed gas discharge, argon has several effects, including controlling the reaction rate of silane and bombarding OH bonds on the surface of SiO deposition [30][31][32]. Therefore, to achieve the desired effect at higher pressures, increasing the argon content in the AAE discharge may be necessary.…”

“…Therefore, in this paper, we present a systematic investigation of the EAE in an Ar/SiH 4 CCP driven by electrically asymmetric voltage waveforms (AAE and SAE) as a function of pressure. Gas mixtures, containing electropositive Ar and electronegative SiH 4 which are widely used in silicon-based film deposition applications [30][31][32], are concerned. The paper is structured as follows: section 2 contains a description of the fluid/electron Monte Carlo (MC) model and the reaction set considered in the model.…”