Effect of sputtering power on the properties of SiO2 films grown by radio frequency magnetron sputtering at room temperature

Surface, Structural, and Mechanical Properties Enhancement of Cr2O3 and SiO2 Co-Deposited Coatings with W or Be

“…The diffractograms of samples A1, A2, B1, and B2 are presented in Figure 5. The Cr 2 O 3 and SiO 2 layers deposited on graphite (C) substrates (ICDD 04-014-0362) show amorphous phase with no specific structural order, as is commonly expected for oxides layers deposited by magnetron sputtering at room temperature [43,44]. For sample A2 the β-W phase (ICDD 00-047-1319) is observed, but the peak corresponding to the (210) diffraction plane has a low intensity with high shift in 2θ position which indicates the formation of a distorted structure.…”

“…TDS measurements were used to evaluate the outgassing process of atomic and molecular species trapped on the deposited matrix. In order to conduct the desorption spectra of H 2 O (18), N 2 (28), O 2 (32), and CO 2 (44), configurations deposited on Si substrate (10 × 10 mm 2 ) were investigated under a heating rate of 10 • C/min, while overviewing the difference in desorption at peak temperatures specific to the binding forces between elements and trapping regions. For a better understanding of the TDS spectra, it must be specified that, on the left, desorption signal is plotted as a function of time and on the right, the temperature (C) (red line) as a function of time.…”

Development and optimisation of a SiO2 PVD technique based on the thermal decomposition of PDMS

“…13 We also note that thin films of a range of other metal oxide materials are being studied for a variety of applications, including as gate oxides in FET structures. [14][15][16][17] Many alternative techniques have been developed to improve individual aspects of the SiO 2 deposition process, such as sol-gel processes, 18 magnetron sputtering, 19 electron beam deposition, 20 with the most promising being atomic layer deposition (ALD). 21 ALD provides unrivalled step coverages and conformity/uniformity, allowing controllable sub-nanometre thicknesses with pinhole free layers due to the atomic layer by layer growth mechanism.…”

Ultrafast Decay, Ultrahigh Spatial Resolution, and Stable γ-CuI Single Crystal Treated by Iodine Annealing and SiO2 Coating

“…Recently, there has been increasing interest in the film coating of crystals to protect them from deliquescence, oxidation, and wear . SiO 2 is a conventional thin film material with a broad transparency spectrum, stable chemical properties, and good hardness and wear resistance. , Additionally, considering the refractive index of γ-CuI and the Fresnel theory, SiO 2 has a suitable refractive index (1.467 at 435 nm) for coating γ-CuI while maintaining transparency . Magnetron sputtering is a suitable coating technique owing to its low preparation temperature, high film density, strong film adhesion, and good controllability. − Therefore, coating γ-CuI crystals with SiO 2 through magnetron sputtering is expected to significantly improve their luminescence stability by isolating them from air.…”

“…17 transparency spectrum, stable chemical properties, and good hardness and wear resistance. 18,19 Additionally, considering the refractive index of γ-CuI and the Fresnel theory, 18 SiO 2 has a suitable refractive index (1.467 at 435 nm) for coating γ-CuI while maintaining transparency. 20 Magnetron sputtering is a suitable coating technique owing to its low preparation temperature, high film density, strong film adhesion, and good controllability.…”