The Deposition of Silicon Films by Pyrolytic Decomposition of SiF2 Gas

Janai, M.; Aftergood, S.; Weil, R.; Pratt, B.

doi:10.1149/1.2127324

Cited by 18 publications

(4 citation statements)

References 2 publications

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“…Approximately 400 W is required to obtain temperatures up to ∼1000 K. Helium buffer gas can be added to the annealing section to cause particle dilution and inhibit coalescence. In addition, small amounts of silicon tetrachloride, silicon tetrafluoride, or other halogen-containing gases can be introduced in this stage as etching reagents to assist in controlling nanocrystal formation. − …”

Section: Experimental Methodsmentioning

confidence: 99%

“…In addition, small amounts of silicon tetrachloride, silicon tetrafluoride, or other halogen-containing gases can be introduced in this stage as etching reagents to assist in controlling nanocrystal formation. [67][68][69][70][71] The cluster cations then enter a combined nozzle and ion optics assembly that allows for the formation and subsequent focusing of a cluster ion beam. No external ionization source is used, the cluster ions result from the photolysis laser.…”

Section: Experimental Methodsmentioning

confidence: 99%

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Synthesis and Temperature-Dependence of Hydrogen-Terminated Silicon Clusters

2001

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A novel laser photolysis source has been used to synthesize hydrogen-terminated silicon clusters Si n H x + , where n e 50. Using mass spectrometry, the hydrogen content of the Si n H x + clusters with n ) 10-30 was measured as a function of temperature from 300 to 950 K. For n ) 10-22 at the lower temperatures, there is a broad distribution of [H]/[Si] ratios which peak around compositions expected for clusters with bulklike silicon cores (x/n > 1). Si n H x + clusters with x/n = 1 appear to be favored at intermediate temperatures. This stoichiometric composition suggests three-dimensional, Si n H n + cage-like structures built from Si-H units. The stability of the cage geometries is supported by density functional calculations. For cluster cations with n g 23 an abrupt transition occurs and there is a sharp drop in the hydrogen content at the lower temperatures. For these clusters, Si n H (n-y) + (y ) 1-5) compositions are prominent at the higher temperatures. These compositions suggest cage-like geometries with one or more internal silicon atoms. By adjusting the source conditions it is possible to generate Si n H x + (n g 23) clusters with a narrow distribution of x (less than two hydrogens wide).

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Section: Experimental Methodsmentioning

confidence: 99%

Section: Experimental Methodsmentioning

confidence: 99%

Synthesis and Temperature-Dependence of Hydrogen-Terminated Silicon Clusters

2001

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“…According to the blank reaction of SiF 2 , we know that a disproportionation reaction occurs for SiF 2 between 400 and 800 ³C. 4,12 However, in the reaction between SiF 2 and WF 6 , polycrystalline silicon is obtained only at temperatures between 500 and 800 ³C with no polycrystalline silicon obtained at 400 ³C. These results indicate that the disproportionation reaction does not compete with the reduction reaction at ¡400 ³C.…”

Section: Resultsmentioning

confidence: 98%

Study of chemical vapor deposition reaction between tungsten hexafluoride and silicon difluoride

Lee¹,

Yang²

1999

J. Mater. Chem.

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“…It is known that the disproportionation reaction of SiF 2 proceeds in the temperature range 400±800 ³C. 7 The reaction is kinetically favored but thermodynamically disfavored as the reaction temperature increases. >From our previous studies, it occurs that the optimal reaction temperature seems to be 650 ³C.…”

Section: Resultsmentioning

confidence: 99%