The dependence of diffusion length, lifetime and emitter Gummel-number on temperature and doping

Zekry, Abdelhalim

doi:10.1007/bf01577633

Cited by 7 publications

(11 citation statements)

References 21 publications

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“…The temperature dependency of h p was also found to give the best fit with k = 0.5. This is much less than the value of 2.5 suggested for an abrupt junction by [34] and agrees with the assumption made in [35]. This deviation from the expression for an abrupt junction is to be expected, since a typical NPT IGBT typically has a shallow P emitter (anode) implanted into an N-substrate, known as a transparent emitter.…”

Section: B Discussionsupporting

confidence: 79%

“…However the value of k varies between references, with different values in the range 0.5-2.5 from [34], [35], [49], [50]. It is suggested in [35] that the Gummel number G ∝ T 0.5 , i.e.…”

Section: Emitter Recombination Temperature Dependencymentioning

confidence: 99%

“…It is suggested in [35] that the Gummel number G ∝ T 0.5 , i.e. h p ∝ T −0.5 , because the minority emitter recombination takes place mainly in the highly-doped part of the emitter where the lifetime, mobility and emitter doping level are independent of temperature.…”

Section: Emitter Recombination Temperature Dependencymentioning

confidence: 99%

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Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence

Bryant

Yang

Mawby

et al. 2011

IEEE Trans. Power Electron.

186

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Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. This article has been accepted for publication in a future issue of this journal, but has not been fully edited. Content may change prior to final publication. Abstract-In many power converter applications, particularly those with high variable loads such as traction and wind power, condition monitoring of the power semiconductor devices in the converter is considered desirable. Monitoring the device junction temperature in such converters is an essential part of this process. In this paper, a method for measuring the IGBT junction temperature using the collector voltage dV /dt at turn-off is outlined. A theoretical closed-form expression for the dV /dt at turn-off is derived, closely agreeing with experimental measurements. The role of dV /dt in dynamic avalanche in highvoltage IGBTs is also discussed. Finally, the implications of the temperature dependence of the dV /dt are discussed, including implementation of such a temperature measurement technique.

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Section: B Discussionsupporting

confidence: 79%

“…However the value of k varies between references, with different values in the range 0.5-2.5 from [34], [35], [49], [50]. It is suggested in [35] that the Gummel number G ∝ T 0.5 , i.e.…”

Section: Emitter Recombination Temperature Dependencymentioning

confidence: 99%

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Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence

Bryant

Yang

Mawby

et al. 2011

IEEE Trans. Power Electron.

186

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“…The overall structure performance at dark is the summation of Jn and Jp, equations (20) and (23), multiplied by two, thus Jdark = 2×(Jn + Jp).…”

Section: • Derivation Of Excess Carriers' Concentrations In Darkmentioning

confidence: 99%

“…The input solar radiation spectrum is assumed to be AM1.5. Both of R and α have tables for their values with each wavelength [21][22][23].…”

Section: B the Optical Model For The Npn Structure Input Solar Radiamentioning

confidence: 99%

Physically Based Analytical Model of Heavily Doped Silicon Wafers Based Proposed Solar Cell Microstructure

et al. 2020

Self Cite

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In this paper, an analytical model of a proposed low-cost high efficiency NPN silicon-based solar cell structure is presented. The structure is based on using low cost heavily doped commercially available silicon wafers and proposed to be fabricated by the same steps as the conventional solar cells except an extra deep trench etch step. Moreover, the cell has been engineered to react to the UV spectrum, resulting in a greater conversion performance. The presented analytical model takes the electrical and optical characteristics into account. Thus, the influence of both physical and technological parameters on the structure performance could be easily examined. Consequently, the optimization of the structure performance becomes visible. To inspect the validity of the analytical model, a comparison of the main performance parameters resulting from the model results with TCAD simulations is carried out showing good agreement.

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