The defect structure of CdTe: Hall data

Chern, Shyh-Shi; Vydyanath, H. R.; ̈ger, F.A. Kro

doi:10.1016/0022-4596(75)90359-x

Cited by 119 publications

(75 citation statements)

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“…Ag/AgC1 [2] and that the diffusion of HTeO2 + preceding reaction [1] is the rate-determining step. The results of the present work also support this mechanism.…”

Section: Discussionmentioning

confidence: 99%

“…Since cadmium telluride (CdTe) is a direct gap semiconductor with a room temperature energy gap of 1.44 eV (1) and can readily be prepared in both n-and p-type form (2), it is considered to be a promising material for low cost thin film photovoltaic and photoelectrochemical cells. A variety of methods, such as liquid-phase epitaxial growth (3), vacuum evaporation (4), chemical transport (5), and direct combination method (6), have been employed to form CdTe thin films on foreign substrates.…”

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confidence: 99%

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Electrochemical Deposition, Optical Properties, and Photoelectrochemical Behavior of CdTe Films

Takahashi

Uosaki

Kita

1984

J. Electrochem. Soc.

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Electrochemical deposition of cadmium telluride from acidic solutions containing CdSO4 and TeO2 is studied and the current‐potential expression for this reaction is presented. The electrochemically deposited normalCdTe films are photoactive, and the maximum cathodic photocurrent due to hydrogen evolution is observed at normalCdTe films deposited at −0.40V. The photocurrents of the as‐grown normalCdTe films are relatively small compared with those of normalCdTe single crystals. The major reason for this low efficiency is the effective recombination of hole‐electron pairs at grain boundaries and at the surface. The photocurrents are increased significantly by the increase of crystallite diameter by the heat‐treatment in a He atmosphere and by the removal of surface Te, which acts as a recombination center, by the etching treatment.

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“…Ag/AgC1 [2] and that the diffusion of HTeO2 + preceding reaction [1] is the rate-determining step. The results of the present work also support this mechanism.…”

Section: Discussionmentioning

confidence: 99%

mentioning

confidence: 99%

Electrochemical Deposition, Optical Properties, and Photoelectrochemical Behavior of CdTe Films

Takahashi

Uosaki

Kita

1984

J. Electrochem. Soc.

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“…In view of our Hall mobility presentation we multiplied the data of Ref. 7 by that value to return to H here. Numerical simulation of the Gunn effect 12 was performed with ⌬Eϭ0.51 eV and m L ϭ0.35m 0 .…”

Section: ͑1͒mentioning

confidence: 99%

High temperature mobility of CdTe

Franc

Grill

Turjanska

et al. 2001

Journal of Applied Physics

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The Hall mobility of electrons H is measured in CdTe in the temperature interval 450-1050°C and defined Cd overpressure in near-intrinsic conditions. The strong decrease of H above 600°C is reported. The effect is explained within a model of multivalley conduction where both electrons in ⌫ 1c minimum and in L 1c minima participate. The theoretical description is based on the solution of the Boltzmann transport equation within the relaxation time approximation including the polar and acoustic phonon intravalley and intervalley scatterings. The ⌫ 1c to L 1c separation ⌬Eϭ0.29 Ϫ10 Ϫ4 T ͑eV͒ for the effective mass in the L valley m L ϭ0.35m 0 is found to best fit the experimental data. Such ⌬E is about four times smaller than it is predicted by first-principle calculations. The recent progress in high technology brings a renewed interest to the research of the basic properties of CdTe ͑CT͒. 1,2 The purpose of this communication is a study of high temperature near intrinsic mobility evaluated from in situ measurements of Hall coefficient R H and conductivity .In our method the content of Cd in the sample changes due to the sublimation from the free surface. The equilibrium is controlled here by a proper Cd overpressure which is established in the two-zone furnace by a temperature of the Cd source. The advantage of this arrangement is the possibility of measuring properties of CT in the phase P -T diagram both in intrinsic conditions and under Cd or Te overpressure. The measurement of R H and is performed depending on the pressure and temperature of Cd when the equilibrium concentration of electrically active defects is established by diffusion processes. Experimental data show as expected, that R H and depend both on pressure of Cd and temperature, but the H is near intrinsic conditions practically independent of Cd pressure P Cd . It implies that there is no important impurity scattering in this case. Figure 1 shows the phase P -T diagram for CT with a marked region of stability of CT, where our measurements were performed ͑Cd-rich area of the phase diagram͒.The measurement was performed on samples from single crystals prepared by vertical cooling in the temperature gradient. The high temperature measurements were done in a quartz ampoule with a diameter 17 mm located in a furnace between poles of an electromagnet. It was possible to keep the sample temperature with the precision of about 1°C and to change the gas pressure of one of the components ͑in our case Cd͒ in the interval 2ϫ10 Ϫ4 Ϫ2 atm. The sample with tungsten or molybdenum spring contacts in the van der Pauw configuration was placed in a quartz holder together with the Pt-PtRh thermocouple.In this communication we shall concentrate on electrons because the influence of holes is weak and can be included in a simple, standard way. The basic problem at the evaluation of the drift electron mobility at temperatures ͑500-1000°C͒ is the determination of scattering mechanisms, which participate in scattering of current carriers. A number of detailed experimental ...

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“…The significance of this for the growth of CdTe can be seen from the phase relationship that was reported by Strauss [1] and is reproduced here as figure 1. Two dependent parameters, the [6][7][8][9] (**) Aa = measured lattice -ao where ao = 6.480 0 A (arbitrary reference).…”

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confidence: 99%