The melt-growth and characterization of cadmium telluride

Abstract

Résumé. 2014

Boron oxide encapsulated Bridgman growth of high-purity high-resistivity cadmium telluride crystals

“…The same holds for silicon and heavy metals. Boron is the dominant impurity, though it is present in concentration two-three orders of magnitude lower than previously reported in LEC grown CdTe crystals [13,14].…”

“…The inert gas pressure was enough for preventing the dissociation of the charge into vapors in accordance with the observation reported in Ref. [13]. The crucible was initially set in the high temperature region of the furnace in order to achieve the complete melting of the charge.…”

“…In the literature it is reported that B 2 O 3 has been used as encapsulant also for growing CdTe crystals in the Liquid Encapsulated Chzochralski (LEC) configuration [10][11][12][13][14][15]. Some of the authors reported that a discoloration of the B 2 O 3 happens, and they suggested this is due to the solubility of CdTe in B 2 O 3 [10,11,13].…”

“…Some of the authors reported that a discoloration of the B 2 O 3 happens, and they suggested this is due to the solubility of CdTe in B 2 O 3 [10,11,13]. Moreover, a strong boron contamination of the crystal was evidenced [13,14].…”

“…Some of the authors reported that a discoloration of the B 2 O 3 happens, and they suggested this is due to the solubility of CdTe in B 2 O 3 [10,11,13]. Moreover, a strong boron contamination of the crystal was evidenced [13,14]. However, the main problem connected to the growth of CdTe by LEC seems to be due to the use of large thermal gradients at the interface (>400 C) connected to the low thermal conductivity of CdTe [15].…”