The effects of heat-treatment, Pt modification of the surface and surface oxide layer on the efficiency for the photoelectrochemical generation of hydrogen were investigated at p-CdTe films deposited electrochemically at -0.35V (vs.Ag/AgC1) from an aqueous sulfuric acid solution of pH = 1.4 containing 1M CdSO4 and 1 mM TeOz. By heat-treatment in a He atmosphere, the crystalline diameter increased and, thus, the number of grain boundaries at which effective electron-hole recombination takes place decreased. Free metallic Te existing near the surface, which acts as a recombination center, was removed by the treatment at the temperatures above 350~ The cathodic photocurrent was increased by the heat-treatment due to these two effects. The cathodic photocurrent was decreased and even the anodic photocurrent was observed at the films treated at too high a temperature and for too long a time. The films were converted to n-type by these treatments because of the removal of the lattice Te from CdTe crystal. Pt modification, either vacuum deposition or codeposition, improved the efficiency, but the photocurrent is small, suggesting that the major reason for the low efficiency is still the bulk recombination. The oxide layer was easily formed on the CdTe films by exposure to air but dissolved by contacting with solution and had no effect on the photoelectrochemical properties of the film.Recently strong attention has been paid to photoelectrolysis of water by using semiconductor electrodesas one of the useful means to convert solar energy into chemical energy, hydrogen (1). To make this process practical, it is essential to find an economical method for the production of polycrystalline semiconductors which have appropriate photoelectrochemical characteristics (2).Cadmium telluride (CdTe) has the following attractive properties for solar energy conversion devices. The bandgap energy is 1.45 eV (3) from which one expects a high solar energy conversion efficiency (4). The direct optical transition (5) results in a large absorption coefficient which makes the use of thin film solar cells possible. Both p-and n-type forms can be prepared (6). Thus, the application of CdTe to solid-state solar cells (7) and photoelectrochemical cells (8) have been studied very extensively. One of us found p-CdTe is a stable cathode material for the photoelectrochemical generation of hydrogen (9).The electrochemical deposition has been studied extensively as a useful method for preparing large area, polycrystalline Cd-chalcogenides (10). The photoelectrochemical properties of electrochemically deposited Cdchalcogenide thin films have also been reported by many research groups but most of the reports are on n-type materials (11).We have recently investigated the electrochemical deposition of CdTe thin films from the solution containing CdSO~ and TeO2 and reported the effect of preparation conditions, e.g., deposition potential, on the composition and optical and electronic properties of the deposited films (12-14). We also studied the ph...