The crystallization of amorphous silicon films

Blum, N. A.; Feldman, Charles

doi:10.1016/0022-3093(72)90006-3

Cited by 119 publications

(17 citation statements)

References 4 publications

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“…This result is in agreement with the work of Blum (14) and Turnbull (22) where it was found that the time required for nucleation of new crystals in a silicon is extremely long in the temperature range of interest here. For the a/C interface to advance during annealing single atoms or small groups of atoms reorient at the amorphous-crystal interface so as to add to the 4 crystal surface at a correct location and orientation.…”

Section: Discussion Of Resultssupporting

confidence: 82%

Some observations on the amorphous to crystalline transformation in silicon

Drosd

Washburn

1982

Journal of Applied Physics

243

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An atomistic model for the transformation of amorphous (α) to crystalline silicon films while in contact with a crystalline substrate is presented. The atomic structure of the {100}, {110}, and {111} surfaces is examined and related to the observed interface migration rates. The assumption that for an atom to attach successfully to the crystal it must complete at least two undistorted bonds, leads to the prediction that the {100} amorphous/crystalline interface should advance fastest and the {111} slowest. The origin of crystal defects is discussed in terms of the atomistic recrystallization mechanism. Microtwins are found to be a logical consequence of crystallization on the {111} surfaces but are not expected to form on any other interface. Once microtwins are formed they can increase the recrystallization rate of a {111} surface. This phenomenon is both described in the model and experimentally observed.

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Section: Discussion Of Resultssupporting

confidence: 82%

Some observations on the amorphous to crystalline transformation in silicon

Drosd

Washburn

1982

Journal of Applied Physics

243

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“…[35][36][37] Since H diffusion depends on the H chemical potential which is known to decrease on H outdiffusion, 35 H diffusion data based on H effusion 49 (which involves much H outdiffusion) cannot be used and we confine here entirely on D-H interdiffusion data with little H outdiffusion. 35 Laser annealing related D-H interdiffusion and temperature calculation 27 open the possibility to measure the (D-H interdiffusion based) H diffusion coefficient at a much higher temperature than available so far, due to the dependence of crystallization temperature on annealing time 50 and due to the short annealing time periods involved in laser scanning. The upper limit of D-H interdiffusionbased H diffusion data is extended in this work by more than 300°C up to T > 800°C.…”

Section: Introductionmentioning

confidence: 99%

Temperature and hydrogen diffusion length in hydrogenated amorphous silicon films on glass while scanning with a continuous wave laser at 532 nm wavelength

Beyer

Andrä

Bergmann

et al. 2018

Journal of Applied Physics

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Rapid thermal annealing by, e.g., laser scanning of hydrogenated amorphous silicon (a-Si:H) films is of interest for device improvement and for development of new device structures for solar cell and large area display application. For well controlled annealing of such multilayers, precise knowledge of temperature and/or hydrogen diffusion length in the heated material is required but unavailable so far. In this study, we explore the use of deuterium (D) and hydrogen (H) interdiffusion during laser scanning (employing a continuous wave laser at 532 nm wavelength) to characterize both quantities. The evaluation of temperature from hydrogen diffusion data requires knowledge of the high temperature (T > 500 °C) deuterium-hydrogen (D-H) interdiffusion Arrhenius parameters for which, however, no experimental data exist. Using data based on recent model considerations, we find for laser scanning of single films on glass substrates a broad scale agreement with experimental temperature data obtained by measuring the silicon melting point and with calculated data using a physical model as well as published work. Since D-H interdiffusion measures hydrogen diffusion length and temperature within the silicon films by a memory effect, the method is capable of determining both quantities precisely also in multilayer structures, as is demonstrated for films underneath metal contacts. Several applications are discussed. Employing literature data of laser-induced temperature rise, laser scanning is used to measure the H diffusion coefficient at T > 500 °C in a-Si:H. The model-based high temperature hydrogen diffusion parameters are confirmed with important implications for the understanding of hydrogen diffusion in the amorphous silicon material.

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“…Researchers have investigated the crystallization of amorphous silicon to take advantage of the comparatively superior electrical properties of poly-Si, [24][25][26][27] particularly for thin-film transistor (TFT) applications. Researchers have investigated the crystallization of amorphous silicon to take advantage of the comparatively superior electrical properties of poly-Si, [24][25][26][27] particularly for thin-film transistor (TFT) applications.…”

Section: Resultsmentioning

confidence: 99%