The Conductance- and Capacitance-Frequency Characteristics of the Rectifying Junctions Formed by Sublimation of Organic Pyronine-B on p-Type Silicon

Çakar, M.; Türüt, A.; Onganer, Yavuz

doi:10.1006/jssc.2002.9706

Cited by 17 publications

(8 citation statements)

References 30 publications

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“…This is typical distribution for materials with traps. The traps (the interface states at the polymer and inorganic semiconductor (p-type Si) interface) do not contribute to the capacitance at sufficiently high frequencies because the traps cannot follow the ac signal [50,51]. The contribution of the traps to device capacitance decreases toward high frequencies.…”

Section: Resultsmentioning

confidence: 97%

“…The interface state capacitance appears directly in parallel with the depletion capacitance resulting in a higher total value of the capacitance for the junction if no interface states were present. At intermediate frequencies, some, but not all, of the interface states will participate in small signal measurements and values of the capacitance observed will be between the low and high frequency values [50][51][52][53][54][55][56][57][58][59][60][61][62]. If the capacitance measurements are made at sufficiently high frequencies, the interface states do not contribute to the diode capacitance.…”

Section: Resultsmentioning

confidence: 99%

“…If the capacitance measurements are made at sufficiently high frequencies, the interface states do not contribute to the diode capacitance. This will occur when the time constant is too long to permit the charge to move in and out of the traps in response to an applied signal [50][51][52][53][54][55][56][57][58][59][60][61][62]. In general, the most common cause for frequency dependent capacitance is trapping of a carrier by the interface states [34,36].…”

Section: Resultsmentioning

confidence: 99%

“…It can be proposed that the I-V characteristics change from SCLC behavior with traps to the filled SCLC characteristics in terms of the switching effect. Usually, at the polymer and semiconductor (p-type Si) interface, there are various kinds of interface states with different lifetimes [50][51][52][53][54][55]. Furthermore, the interfacial layer existing between the two semiconductors consists of semiconductor oxides and possibly a region where chemical bonds have formed between organic and inorganic materials [34,36,[50][51][52][53][54][55][56].…”

Section: Resultsmentioning

confidence: 99%

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The electrical measurements in poly(2-chloroaniline) based thin film sandwich devices

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Section: Resultsmentioning

confidence: 97%

Section: Resultsmentioning

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“…The investigation of various metal-inorganic semiconductors with different interfacial layers, especially the polymeric interfacial layer, is important to achieve good understanding of conduction mechanisms. [24][25][26][27][28][29] In general, a C-V plot shows an increase in capacitance with increasing forward-bias voltage. However, Ho et al 29 studied the capacitance of Pd-Si Schottky contacts and observed an anomalous peak in the forward-bias C-V characteristic; they attributed this anomalous behavior to interface states.…”

Section: Introductionmentioning

confidence: 99%

Anomalous Peak in the Forward-Bias C–V Plot and Temperature-Dependent Behavior of Au/PVA (Ni,Zn-doped)/n-Si(111) Structures

Tunç

Altındal

Dökme

et al. 2010

Journal of Elec Materi

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In this study, the temperature-dependent mean density of interface states ðN SS Þ and series resistance ðR S Þ profiles of Au/PVA (Ni,Zn-doped)/n-Si (111) structures are determined using current-voltage (IÀV) and admittance spectroscopy [capacitance-voltage (C-V) and conductance-voltage G/x-V] methods. The other main electronic parameters such as zero-bias barrier height ðU B0 Þ, ideality factor (n), and doping concentration (N D ) are also obtained as a function of temperature. Experimental results show that the values of U B0 , n, R S , and N SS are strongly temperature dependent. The values of U B0 and R S increase with increasing temperature, while those of n and N SS decrease. The C-V plots of Au/PVA (Ni,Zn-doped)/n-Si(111) structures exhibit anomalous peaks in forward bias (depletion region) at each temperature, and peak positions shift towards negative bias with increasing temperature. The peak value of C has been found to be strongly dependent on N SS , R S , and temperature. The experimental data confirm that the values of N SS , R S , temperature, and the thickness and composition of the interfacial polymer layer are important factors that influence the main electrical parameters of the device.

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Electrical characteristics of Al/polyindole Schottky barrier diodes. I. Temperature dependence

Altındal

Sarı

Ünal

et al. 2009

J of Applied Polymer Sci

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In this study, the forward and reverse bias current–voltage (I–V), capacitance–voltage (C–V), and conductance–voltage (G/ω–V) characteristics of Al/polyindole (Al/PIN) Schottky barrier diodes (SBDs) were studied over a wide temperature range of 140–400 K. Zero‐bias barrier height ΦB0(I–V), ideality factor (n), ac electrical conductivity (σac), and activation energy (Ea), determined by using thermionic emission (TE) theory, were shown fairly large temperature dispersion especially at lower temperatures due to surface states and series resistance of Al/PIN SBD. I–V characteristics of the Al/PIN SBDs showed an almost rectification behavior, but the reverse bias saturation current (I0) and n were observed to be high. This high value of n has been attributed to the particular distribution of barrier heights due to barrier height inhomogeneities and interface states that present at the Al/PIN interface. The conductivity data obtained from G/ωV measurements over a wide temperature range were fitted to the Arrhenius and Mott equations and observed linear behaviors for σac vs. 1/T and ln σac vs. 1/T1/4 graphs, respectively. The Mott parameters of T0 and K0 values were determined from the slope and intercept of the straight line as 3.8 × 107 and 1.08 × 107 Scm−1K1/2, respectively. Assuming a value of 6 × 1012 s−1 for ν0, the decay length α−1 and the density states at the Fermi energy level, N(EF) are estimated to be 8.74 Å and 1.27 × 1020 eV−1cm−3, respectively. © 2009 Wiley Periodicals, Inc. J Appl Polym Sci, 2009

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The Conductance- and Capacitance-Frequency Characteristics of the Rectifying Junctions Formed by Sublimation of Organic Pyronine-B on p-Type Silicon

Cited by 17 publications

References 30 publications

The electrical measurements in poly(2-chloroaniline) based thin film sandwich devices

The electrical measurements in poly(2-chloroaniline) based thin film sandwich devices

Anomalous Peak in the Forward-Bias C–V Plot and Temperature-Dependent Behavior of Au/PVA (Ni,Zn-doped)/n-Si(111) Structures

Electrical characteristics of Al/polyindole Schottky barrier diodes. I. Temperature dependence

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