The carrier contribution to the elastic constants in superlattices of non-parabolic semiconductors with graded interfaces under magnetic quantization: simplified theory and suggestion for experimental determination

Ghatak, K. P.; Biswas, Shyamal; de, Dominique; Ghosal, Shibnath; Chatterjee, Sankhadeep

doi:10.1016/j.physb.2004.08.005

Cited by 9 publications

(2 citation statements)

References 36 publications

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“…A 33% drop in C 44 was noticed as the carrier concentration increased from 10 18 to 10 21 cm −3 , as predicted by NENP and contrary to a 5.5% decrease predicted by the EP model. The theoretical work by Ghatak et al concluded that temperature-normalized Δ C 44 increases monotonically with increasing carrier concentration [104]. The recent work by Male et al presents another experimental evidence of the impact of varying the vacancy concentration, which is equivalent to varying the carrier concentration, on the elastic (speed of sound) and the plastic properties (hardness and fracture toughness) of rare earth tellurides [105] .In summary, the electronic contribution to the elastic constants varies based on the doping level, the carrier concentration and the details of the band structure.…”

Section: Deformation Mechanismsmentioning

confidence: 99%

Mechanical behaviour of thermoelectric materials – a perspective

Malki

Snyder

Dunand

2023

International Materials Reviews

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Research on thermoelectric materialswith their vast potential for applications in solid-state cooling or energy-conversion deviceshas so far mainly focused on enhancing their conversion efficiency. However, understanding and tailoring the mechanical performance of thermoelectric modules and devices is crucial for their long-term use, as they are subjected to spatially-complex and time-varying thermomechanical stressesboth internal and externalwhich may lead to plastic, fatigue and/or creep deformation. This leads to changes in thermoelectric performance, dimensions (via strain accumulation) and mechanical integrity (via crack and pore formation, leading to failure). This review addresses the current understanding of various modes of stress-induced deformation that can take place during extended operation of thermoelectric materials and their impact on the strain (elastic, plastic, and creep), and the associated damage (bloating, fatigue, and fracture). Finally, some new areas of research straddling mechanical and thermoelectric behaviour are identified.

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Section: Deformation Mechanismsmentioning

confidence: 99%

Mechanical behaviour of thermoelectric materials – a perspective

Malki

Snyder

Dunand

2023

International Materials Reviews

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“…Considering only the lowest mini band, since in an actual SL only the lowest miniband is significantly populated at low temperatures, where the quantum effects become prominent, the electron statistics can be written as • T D and T D is the Dingle temperature. The carrier contribution to the second-and third-order elastic constants can, respectively, be expressed 16 as…”

Section: Theoretical Backgroundmentioning

confidence: 99%

Electronic Contribution to the Elastic Constants in Strained Layer Quantum Dot Superlattices of Non-Parabolic Semiconductors with Graded Interfaces

Mallik¹,

Ghatak²,

Choudhary³

et al. 2005

Jnl of Comp & Theo Nano

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Most papers in the area of semiconductor superlattices (SLs) are based on the assumption that the interface between the layers are sharply defined with the zero thickness so as to be devoid of any interface effects. The advanced experimental techniques may produce SL with physical interface between the two materials crystallographically abrupt, but the bonding environment of the atoms adjoining these interface will change at least on an atomic scale as the potential form changes from a well (barrier) to a barrier (well), an intermediate potential region exists for the charge carriers. Thus, the influence of the finite thickness of the interface on the carrier dispersion law becomes very important. In this paper we study the electronic contribution to the elastic constants in strained layer quantum dot superlattices of non-parabolic semiconductors with graded structures and compare the same with that of the constituent materials, by formulating the appropriate dispersion laws. It is found, taking InSb/GaSb quantum dot strained superlattices of non-parabolic semiconductors as an example, that the carrier contribution to the second-and third-order elastic constants oscillates with the electronic concentration together with the fact that the nature of oscillations are totally dispersion relation dependent. We have also suggested an experimental method for determining the electronic contribution to the elastic constants in quantum-confined materials having arbitrary carrier energy spectra. In addition, the well-known results for bulk specimens of wide-gap stress free materials have been obtained as special cases from our generalized formulation under certain limiting conditions.

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The DRs in Low Dimensional HD Systems in the Presence of Magnetic Field

Ghatak¹

2015

Springer Tracts in Modern Physics

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The carrier contribution to the elastic constants in superlattices of non-parabolic semiconductors with graded interfaces under magnetic quantization: simplified theory and suggestion for experimental determination

Cited by 9 publications

References 36 publications

Mechanical behaviour of thermoelectric materials – a perspective

Mechanical behaviour of thermoelectric materials – a perspective

Electronic Contribution to the Elastic Constants in Strained Layer Quantum Dot Superlattices of Non-Parabolic Semiconductors with Graded Interfaces

The DRs in Low Dimensional HD Systems in the Presence of Magnetic Field

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